Electronic device with reduced non-device edge area

ABSTRACT

A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

BACKGROUND OF THE INVENTION

Opto-electronic devices that make use of organic materials are becomingincreasingly desirable for a number of reasons. Many of the materialsused to make such devices are relatively inexpensive, so organicopto-electronic devices have the potential for cost advantages overinorganic devices. In addition, the inherent properties of organicmaterials, such as their flexibility, may make them well suited thrparticular applications such as fabrication on a flexible substrate.Examples of organic opto-electronic devices include organic lightemitting devices (OLEDs), organic phototransistors, organic photovoltaiccells, and organic photodetectors. For OLEDs, the organic materials mayhave performance advantages over conventional materials. For example,the wavelength at which an organic emissive layer emits light maygenerally be readily tuned with appropriate dopants.

OLEDs make use of thin organic films that emit light when voltage isapplied across the device. OLEDs are becoming an increasinglyinteresting technology for use in applications such as fiat paneldisplays, illumination, and backlighting. Several OLED materials andconfigurations are described in U.S. Pat. Nos. 5,844,363, 6,303,238, and5,707,745, which are incorporated herein by reference in their entirety.

One application for phosphorescent emissive molecules is a full colordisplay. Industry standards for such a display call for pixels adaptedto emit particular colors, referred to as “saturated” colors. Inparticular, these standards for saturated red, green, and blue pixels.Color may be measured using CIE coordinates, which are well known to theart.

One example of a green emissive molecule is tris(2-phenylpyridine)iridium, denoted Ir(ppy)3, which has structure of Formula 1:

In this, and later figures herein, we depict the dative bond fromnitrogen to metal (here, Ir) as a straight line.

As used herein, the term “organic” includes polymeric materials as wellas small molecule organic materials that may be used to fabricateorganic opto-electronic devices, “Small molecule” refers to any organicmaterial that is not a polymer, and “small molecules” may actually bequite large. Small molecules may include repeat units in somecircumstances. For example, using a long chain alkyl group as asubstituent does not remove a molecule from the “small molecule” class.Small molecules may also be incorporated into polymers, for example as apendent group on a polymer backbone or as a part of the backbone. Smallmolecules may also serve as the core moiety of a dendrimer, whichconsists of a series of chemical shells built on the core moiety. Thecore moiety of a dendrimer may be a fluorescent or phosphorescent smallmolecule emitter. A dendrimer may be a “small molecule,” and it isbelieved that all dendrimers currently used in the field of OLEDs aresmall molecules.

As used herein, “top” means furthest away from the substrate, while“bottom” means closest to the substrate. Where a first layer isdescribed as “disposed over” a second layer, the first layer is disposedfurther away from substrate. There may be other layers between the firstand second layer, unless it is specified that the first layer is “incontact with” the second layer. For example, a cathode may be describedas “disposed over” an anode, even though there are various organiclayers in between.

As used herein, “solution processible” means capable of being dissolved,dispersed, or transported in and/or deposited from a liquid medium,either in solution or suspension form.

A ligand may be referred to as “photoactive” when it is believed thatthe ligand directly contributes to the photoactive properties of anemissive material. A ligand may be referred to as “ancillary” when it isbelieved that the ligand does not contribute to the photoactiveproperties of an emissive material, although an ancillary ligand mayalter the properties of a photoactive ligand.

As used herein, and as would be generally understood by one skilled inthe art, a first “Highest Occupied Molecular Orbital” (HOMO) or “LowestUnoccupied Molecular Orbital” (LUMO) energy level is “greater than” or“higher than” a second HOMO or LUMO energy level if the first energylevel is closer to the vacuum energy level. Since ionization potentials(IP) are measured as a negative energy relative to a vacuum level, ahigher HOMO energy level corresponds to an IP having a smaller absolutevalue (an IP that is less negative). Similarly, a higher LUMO energylevel corresponds to an electron affinity (EA) having a smaller absolutevalue (an EA that is less negative). On a conventional energy leveldiagram, with the vacuum level at the top, the LUMO energy level of amaterial is higher than the HOMO energy level of the same material. A“higher” HOMO or LUMO energy level appears closer to the top of such adiagram than a “lower” HOMO or LUMO energy level.

As used herein, and as would be generally understood by one skilled inthe art, a first work function is “greater than” or “higher than” asecond work function if the first work function has a higher absolutevalue. Because work functions are generally measured as negative numbersrelative to vacuum level, this means that a “higher” work function ismore negative. On a conventional energy level diagram, with the vacuumlevel at the top, a “higher” work function is illustrated as furtheraway from the vacuum level in the downward direction. Thus, thedefinitions of HOMO and LUMO energy levels follow a different conventionthan work functions.

More details on OLEDs, and the definitions described above, can be foundin U.S. Pat. No. 7,279,704, which is incorporated herein by reference inits entirety.

BRIEF SUMMARY OF THE INVENTION

Some embodiments provided herein may comprise a device, methods formanufacturing a device, and/or devices prepared by a process that reduceor eliminate non-device (or “dead space”) of a device without sufferingfrom an increase in degradation from atmospheric conditions. That is,for example, embodiments provided herein may comprise a device in whicha portion of the device may be disposed at or near the edge of thesubstrate, without suffering an increase in device degradation byutilizing a barrier film as an edge seal that is disposed over at leasta portion of the vertical side and/or edge of the substrate (as well asa side of the device). By so doing, the ingress across the interface ofthe barrier film and the substrate (which is typically faster thanacross the bulk of the barrier film) may maintain sufficient lengthwithout extending the barrier film layer in a direction perpendicular toa side of the device which would, in some instances, create additionalnon-devices of the device.

In some embodiments, a first product may be provided. The first productmay comprise a substrate having a first surface, a first side, and afirst edge where the first surface meets the first side; and a devicedisposed over the substrate, the device having a second side, where atleast a first portion of the second side is disposed withinapproximately 3 mm from the first edge of the substrate. The firstproduct may further comprise a first barrier film that covers at least aportion of the first edge of the substrate, at least a portion of thefirst side of the substrate, and at least the first portion of thesecond side of the device.

In some embodiments, in the first product as described above, at leastthe first portion of the second side of the device may be disposedwithin approximately 2 mm from the first edge of the substrate. In someembodiments, at least the first portion of the second side of the devicemay be disposed within approximately 1 mm from the first edge of thesubstrate. In some embodiments, at least the first portion of the secondside of the device may be disposed within approximately 0.5 mm from thefirst edge of the substrate. In some embodiments, at least the firstportion of the second side of the device may be disposed withinapproximately 0.1 mm from the first edge of the substrate.

In some embodiments, in the first product as described above, the devicemay comprise an active device area and an inactive device area and atleast a portion of the active device area of the device may be disposedwithin 0.1 mm from the first edge of the substrate.

In some embodiments, in the first product as described above, the devicemay comprise an active device area and at least a portion of the activedevice area of the device may be disposed within 0.1 mm from the firstedge of the substrate.

In some embodiments, in the first product as described above, thesubstrate may comprise any one of: a glass, a plastic, or a metal foilmaterial.

In some embodiments, in the first product as described above, the firstbarrier film may comprise a mixture of polymeric material andnon-polymeric material. In some embodiments, the first barrier film maycomprise a mixture of polymeric silicon and inorganic silicon.

In some embodiments, in the first product as described above, the firstbarrier film may be disposed over at least a portion of the device. Insome embodiments, the first barrier film may be disposed over the entiredevice.

In some embodiments, in the first product as described above, the devicemay comprise a plurality of sides and the first barrier film may covereach of the plurality of sides of the device. In some embodiments, thesubstrate may comprise a plurality of sides, and the first barrier filmmay cover at least a portion of each of the plurality of sides of thesubstrate. In some embodiments, the substrate may comprise four sidesand the first barrier film may cover at least a portion of at least twoof the sides of the substrate. In some embodiments, the first barrierfilm may be disposed over the entire device.

In some embodiments, in the first product as described above, the firstproduct may further comprise a second barrier film that may be disposedover the device. The first barrier film and the second barrier film maycomprise different materials. In some embodiments, the second barrierfilm may comprise a glass, plastic, a plastic coated with a barrierfilm, or a metal foil material.

In some embodiments, in the first product as described above, thesubstrate may have a first outer perimeter, and the device may have asecond outer perimeter. In some embodiments, at least approximately 50%of the second outer perimeter of the device may be disposed withinapproximately 1 mm from the first outer perimeter of the substrate. Insome embodiments, at least approximately 50% of the second outerperimeter of the device may be disposed within approximately 0.1 mm fromthe first outer perimeter of the substrate. In some embodiments, atleast approximately 75% of the second outer perimeter of the device maybe disposed within approximately 1 mm from the first outer perimeter ofthe substrate. In some embodiments, at least approximately 75% of thesecond outer perimeter of the device may be disposed withinapproximately 0.1 mm from the first outer perimeter of the substrate.

In some embodiments, in the first product as described above, the firstbarrier film may have been deposited using chemical vapor deposition CVDand an organosilicon precursor.

In some embodiments, the first product may comprise anyone of: a solarcell, a thin film battery, an organic electronic device, a lightingpanel or a lighting source having a lighting panel, a display or anelectronic device having a display, a mobile phone, a notebook computer,a tablet computer, or a television.

In some embodiments, in the first product as described above, the devicemay comprise an organic layer. In some embodiments, the device comprisesan OLED.

In some embodiments, in the first product as described above, the firstproduct may further comprise an electronics packaging, where theelectronics packaging has at least a dimension that is less than that ofthe device. In some embodiments, the electronics packaging has a totalarea that is less than the total area of the device.

In some embodiments, in the first product as described above, the firstproduct may further comprise a plurality of devices. In someembodiments, each of the plurality of devices may be disposed at adistance of less than 6.0 mm from at least one of the other devices. Insome embodiments, each of the plurality of devices is disposed at adistance of less than 4.0 mm from at least one of the other devices. Insome embodiments, each of the plurality of devices may be disposed at adistance of less than 2.0 mm from at least one of the other devices. Insome embodiments, each of the plurality of devices may be disposed at adistance of less than 1.0 mm from at least one of the other devices.

In some embodiments, in the first product as described above, where thefirst product comprises a plurality of devices, the plurality of devicesmay be disposed on the same substrate. In some embodiments, theplurality of devices may be disposed on different substrates. In someembodiments, the plurality of devices may comprise at least two devicesthat emit light having a peak wavelength that is different. In someembodiments, the first product may comprise a display.

In some embodiments, in the first product as described above, thesubstrate may further comprise a second surface and a plurality ofelectrical conductors may be disposed within the substrate, where eachof the plurality of conductors extends from the first surface to thesecond surface of the substrate. In some embodiments, each of theelectrical conductors may be disposed within a micro-hole. In someembodiments, the substrate may comprise an outer perimeter and each ofthe plurality of conductors may be disposed within 1 mm of the outerperimeter. In some embodiments, where the substrate comprises an outerperimeter, at least one of the conductors may be disposed at a distanceof greater than 1 mm from the outer perimeter of the substrate.

In some embodiments, in the first product as described above, the firstproduct may further comprise a plurality of electrical conductors thatmay be disposed on the first side of the substrate. In some embodiments,the substrate may further comprise a second surface and each of theplurality of conductors may extend from the first surface to the secondsurface of the substrate.

In some embodiments, in the first product as described above where thesubstrate comprises a second surface and a plurality of conductorseither disposed within the substrate or disposed on the first side ofthe substrate, the first product may further comprise a plurality ofelectrodes disposed over the substrate. In some embodiments, each of theplurality of electrical conductors may be electrically connected to atleast one of the plurality of electrodes. In some embodiments, theelectrical connection between the plurality of electrodes and theplurality of electrical conductors may comprise a patterned conductivetrace disposed on the first surface of the substrate.

In some embodiments, a first product may be provided that comprises afirst substrate having a first surface, a first side, and a first edgewhere the first surface meets the first side; a second substrate havinga first surface, a first side, and a first edge where the first surfacemeets the first side; and a plurality of devices that comprises a firstdevice and a second device. The first device may be disposed over thefirst substrate and have a second side, where at least a first portionof the second side of the first device is disposed within approximately3.0 mm from the first edge of the first substrate. The first product mayfurther comprise a first barrier film that covers at least a portion ofthe first edge of the first substrate, at least a portion of the firstside of the first substrate, and at least the first portion of thesecond side of the first device. The second device may be disposed overthe second substrate and have a have a second side, where at least afirst portion of the second side of the second device is disposed withinapproximately 3.0 mm from the first edge of the second substrate. Thefirst product may further include a second barrier film that covers atleast a portion of the first edge of the second substrate, at least aportion of the first side of the second substrate, and at least thefirst portion of the second side of the second device.

In some embodiments, in the first product as described above, the firstportion of the second side of the first device may be disposed at adistance of less than 6.0 mm of the first portion of the second side ofthe second device. In some embodiments, the first portion of the secondside of the first device may be disposed at a distance of less than 2.0mm of the first portion of the second side of the second device. In someembodiments, the first portion of the second side of the first devicemay be disposed at a distance of less than 1.0 mm of the first portionof the second side of the second device.

In some embodiments, in the first product as described above, the firstdevice may comprise an active device area and an inactive device area;the second device may comprise an active device area and an inactivedevice area; and at least a portion of the active device area of thefirst device is disposed at a distance of less than 1.0 mm of at least aportion of the active device area of the second device.

In some embodiments, in the first product as described above, the firstdevice may comprise an active device area; the second device maycomprise an active device area; and at least a portion of the activedevice area of the first device may be disposed at a distance of lessthan 0.01 mm of at least a portion of the active device area of thesecond device.

Embodiments may also provide a first method. The first method mayinclude the steps of providing a substrate having: a first surface, afirst side, and a first edge where the first surface meets the firstside; and a device disposed over the first surface of the substrate, thedevice having a second side. At least a first portion of the second sideof the device may be disposed not more than 3.0 mm from the first edgeof the substrate. After providing the substrate, the first methodfurther includes the step of depositing a first barrier film so as tocover at least a portion of the first edge of the substrate, at least aportion of the first side of the substrate, and at least the firstportion of the second side of the device.

In some embodiments, in the first method as described above, at leastthe first portion of the second side may be disposed not more than 2.0mm from the first edge. In some embodiments, at least the first portionof the second side may be disposed not more than 1.0 mm from the firstedge. In some embodiments, at least the first portion of the second sidemay be disposed not more than 0.5 mm from the first edge. In someembodiments, at least the first portion of the second side may bedisposed not more than 0.1 mm from the first edge.

In some embodiments, in the first method as described above, the devicemay comprise an active device area; and at least a portion of the activedevice area of the device may be disposed within 0.1 mm from the firstedge of the substrate.

In some embodiments, in the first method as described above, the firstbarrier film may comprise a mixture of polymeric material andnon-polymeric material. In some embodiments, the first barrier film maycomprise a mixture of polymeric silicon and inorganic silicon.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: scribing the substrateat a plurality of positions, depositing the device over the firstsurface of the substrate, and breaking the substrate at the plurality ofscribed positions. In some embodiments, the step of breaking thesubstrate may be performed before the device is deposited over the firstsurface of the substrate. In some embodiments, the step of breaking thesubstrate may be performed after the device is deposited over the firstsurface of the substrate.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: depositing the deviceover the first surface of the substrate; after the device is deposited,scribing the substrate and the device at a plurality of positions; andbreaking the substrate and the device at the plurality of scribedpositions.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the step of depositing the device overthe entire first surface of the substrate. In some embodiments, the stepof providing a substrate may include the step of depositing the devicethrough a mask having an opening that is larger than the first surfaceof the substrate.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: depositing the deviceover the first surface of the substrate; and after the device isdeposited, breaking the substrate and the device at a plurality ofplaces. In some embodiments, the step of breaking the substrate and thedevice may comprise cutting the device and the substrate.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: depositing the deviceover the first surface of the substrate; after the device is deposited,ablating a portion of the active to expose the second side of thedevice; and after the device is deposited, ablating a portion of thesubstrate to expose the first side.

In some embodiments, in the first method as described above, afterdepositing the first barrier film, the method may further comprise thestep of breaking the substrate.

In some embodiments, in the first method as described above, the firstmethod may further comprise the step of forming a plurality ofconductive paths from the first surface of the substrate to a secondsurface of the substrate. In some embodiments, the step of forming aplurality of conductive paths may include the steps of: fabricating aplurality of vias in the substrate from the first surface to the secondsurface; and disposing conductive material in each of the plurality ofvias.

In some embodiments, in the first method as described above comprisingthe step of forming a plurality of conductive paths from the firstsurface of the substrate to a second surface of the substrate, the stepof forming a plurality of conductive paths may comprise disposingconductive material on the first side of the substrate. In someembodiments, the step of disposing conductive material on the first sideof the substrate comprises any one of, or some combination of: directprinting the conductive material over a portion of the first side to forthe plurality of conductive paths; disposing a conductive layer over atleast a portion of the first side and patterning the conductive layer toform the plurality of conductive paths; depositing a conductive layer toform the plurality of conductive paths using a vacuum process; and/ordipping the first side of the substrate into a conductive material so asto form the plurality of conductive paths.

Embodiments may also provide a first product prepared by a process. Theprocess may include the steps of providing a substrate having a firstsurface, a first side, and a first edge where the first surface meetsthe first side; and a device disposed over the first surface of thesubstrate having a second side, where at least a first portion of thesecond side is disposed not more than 1.0 mm from the first edge. Theprocess may further include the step of depositing a first barrier filmso as to cover at least a portion of the first edge of the substrate, atleast a portion of the first side of the substrate, and at least thefirst portion of the second side.

In some embodiments, in the first product prepared by the process asdescribed above, the first barrier film may comprise a mixture ofpolymeric material and non-polymeric material.

In some embodiments, in the first product prepared by the process asdescribed above, the step of depositing the first barrier film maycomprise using an organosilicon precursor. In some embodiments, the stepof depositing the first barrier film may comprise chemical vapordeposition CVD. In some embodiments, the chemical vapor deposition maybe plasma-enhanced.

In some embodiments, in the first product prepared by the process asdescribed above where the step of depositing the first barrier filmcomprise vapor deposition using an organosilicon precursor, the barrierfilm may consist essentially of a mixture of polymeric silicon andinorganic silicon. In some embodiments, the weight ratio of polymericsilicon to inorganic silicon may be in the range of 95:5 to 5:95. Insome embodiments, the polymeric silicon and the inorganic silicon may becreated from the same precursor material. In some embodiments, at leasta 0.1 μm thickness of the barrier film may be deposited under the samereaction conditions for all the reaction conditions in the depositionprocess. In some embodiments, the water vapor transmission rate may beless than 10⁻⁶ g/m²/day through the at least 0.1 μm thickness of thebarrier film.

In some embodiments, in the first product prepared by the process asdescribed above where the step of depositing the first barrier filmcomprise vapor deposition using an organosilicon precursor, theprecursor material may comprise hexamethyl disiloxane or dimethylsiloxane. In some embodiments, the precursor material may comprise asingle organosilicon compound. In some embodiments, the precursormaterial comprises a mixture of organosilicon compounds.

Embodiments may also provide a first product. The first product maycomprise a substrate having a first surface, a first side, and a firstedge where the first surface meets the first side; and a device disposedover the substrate having a second side; wherein at least a firstportion of the second side is disposed within approximately 1.0 mm fromthe first edge of the substrate. The device may comprise a first organicmaterial. In some embodiments, no portion of the first side of the firstsubstrate is covered by more than 6×10¹³ atoms/cm² of the first organicmaterial.

In some embodiments, in the first product as described above, the firstorganic material does not cover any portion of the first side of thesubstrate.

In some embodiments, the first product as described above may furthercomprise a first barrier film that covers at least a portion of thefirst edge of the substrate, at least a portion of the first side of thesubstrate, and at least the first portion of the second side of thedevice.

In some embodiments, in the first product as described above, at leastthe first portion of the second side of the device may be disposedwithin approximately 0.1 mm from the first edge of the substrate.

Embodiments may also provide a first method. The first method mayinclude the steps of providing a substrate having: a first surface, afirst side, and a first edge where the first surface meets the firstside; and a device disposed over a first surface of the substrate; andbreaking the device so as to expose a second side of the device suchthat at least a first portion of the device is disposed not more than3.0 mm from the first edge. In some embodiments, at least the firstportion of the device may be disposed not more than 2.0 mm from thefirst edge. In some embodiments, at least the first portion of thedevice may be disposed not more than 1.0 mm from the first edge. In someembodiments, at least the first portion of the device is disposed notmore than 0.1 mm from the first edge.

In some embodiments, in the first method as described above, the devicemay comprise an active device area; and at least a portion of the activedevice area of the device may be disposed not more than 0.1 mm from thefirst edge of the substrate.

In some embodiments, in the first method as described above, the step ofproviding a substrate having a first side and a first edge may includethe step of breaking the substrate along the first side. In someembodiments, the steps of breaking the substrate and breaking the devicemay comprise the same step.

In some embodiments, in the first method as described above and afterthe step of breaking the device, the method may further comprise thestep of depositing a first barrier film so as to cover at least aportion of the first edge of the substrate, at least a portion of thefirst side of the substrate, and at least the first portion of thesecond side of the device. In some embodiments, the steps of breakingthe device and depositing a first barrier film may be performed in avacuum. In some embodiments, the first barrier film may comprise amixture of polymeric silicon and inorganic silicon.

In some embodiments, the step of breaking the device may comprisecutting the device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an organic light emitting device.

FIG. 2 shows an inverted organic light emitting de does not have aseparate electron transport layer.

FIG. 3 shows a cross-section of an exemplary device having a multilayerbarrier. The footprints of the deposition masks used for both inorganicand polymer films may be the same, which is larger than the devicefootprint by, for example, 1 mm in this exemplary device.

FIG. 4 shows a cross-section of an exemplary device having a multilayerbarrier. The footprint of the mask used for the polymer film may belarger than the device footprint by, for example, 1 mm, and thefootprint of the mask of the inorganic film may be larger than that ofthe polymer film by, for example, 1 mm.

FIG. 5 shows a cross-section of an exemplary device having a multilayerharrier. The footprints of the masks used for each stack of inorganicand polymer film may be larger than the previous stack by, for example,1 mm. The footprint of the first stack is larger than that of the devicefootprint of the device by, for example, 1 mm.

FIG. 6 is a photograph of a silicon wafer mounted vertically on asubstrate electrode in a plasma enhanced vapor deposition (PECVD)system.

FIG. 7 is a cross sectional view of an exemplary plasma enhancedchemical vapor deposition apparatus in accordance with some embodiments.

FIG. 8 is an exemplary plot of experimental results correlatingsemi-logarithmic scale of film thickness (log(t)) vs. length, where the“length” corresponds to the distance from an RF electrode to a substratein an exemplary vapor deposition process.

FIG. 9 is a cross sectional view of an exemplary device in accordancewith some embodiments.

FIG. 10 is an illustration of an exemplary configuration of electricalconductors from a first surface of a substrate to a second surface ofthe substrate in accordance with some embodiments.

FIG. 11 is an illustration of an exemplary configuration of electricalconductors from a first surface of a substrate to a second surface ofthe substrate in accordance with some embodiments.

FIGS. 12( a) and (b) show an exemplary mobile device in accordance withsome embodiments.

FIG. 13 comprises two photographs of an experimental device just afterfabrication in accordance with some embodiments.

FIG. 14 comprises two photographs of the experimental device from FIG.13 21 hours after fabrication in accordance with some embodiments.

FIGS. 15( a)-(d) show an exemplary device and fabrication process inaccordance with some embodiments.

FIG. 16 show an exemplary device and fabrication process in accordancewith some embodiments.

FIG. 17 show an exemplary device and fabrication process in accordancewith some embodiments.

DETAILED DESCRIPTION OF THE INVENTION

Generally, an OLED comprises at least one organic layer disposed betweenand electrically connected to an anode and a cathode. When a current isapplied, the anode injects holes and the cathode injects electrons intothe organic layer(s). The injected holes and electrons each migratetoward the oppositely charged electrode. When an electron and holelocalize on the same molecule, an “exciton,” which is a localizedelectron-hole pair having an excited energy state, is formed. Light isemitted when the exciton relaxes via a photoemissive mechanism. In somecases, the exciton may be localized on an excimer or an exciplex.Non-radiative mechanisms, such as thermal relaxation, may also occur,but are generally considered undesirable.

The initial OLEDs used emissive molecules that emitted light from theirsinglet states (“fluorescence”) as disclosed, for example, in U.S. Pat.No. 4,769,292, which is incorporated by reference in its entirety.Fluorescent emission generally occurs in a time frame of less than 10nanoseconds.

More recently, OLEDs having emissive materials that emit light fromtriplet states (“phosphorescence”) have been demonstrated. Baldo et al.,“Highly Efficient Phosphorescent Emission from OrganicElectroluminescent Devices,” Nature, vol. 395, 151-154, 1998;(“Baldo-1”) and Baldo et al., “Very high-efficiency green organiclight-emitting devices based on eleetrophosphorescence,” Appl. Phys.Lett., vol. 75, No. 3, 4-6 (1999) (“Baldo-H”), which are incorporated byreference in their entireties. Phosphorescence is described in moredetail in U.S. Pat. No. 7,279,704 at cols. 5-6, which are incorporatedby reference.

FIG. 1 shows an organic light emitting device 100. The figures are notnecessarily drawn to scale. Device 100 may include a substrate 110, ananode 115, a hole injection layer 120, a hole transport layer 125, anelectron blocking layer 130, an emissive layer 135, a hole blockinglayer 140, an electron transport layer 145, an electron injection layer150, a protective layer 155, and a cathode 160. Cathode 160 is acompound cathode having a first conductive layer 162 and a secondconductive layer 164. Device 100 may be fabricated by depositing thelayers described, in order. The properties and functions of thesevarious layers, as well as example materials, are described in moredetail in U.S. Pat. No. 7,279,704 at cols. 6-10, which are incorporatedby reference.

More examples tier each of these layers are available. For example, aflexible and transparent substrate-anode combination is disclosed inU.S. Pat. No. 5,844,363, which is incorporated by reference in itsentirety. An example of a p-doped hole transport layer is m-MTDATA dopedwith F.sub.4-TCNQ at a molar ratio of 50:1, as disclosed in U.S. PatentApplication Publication No. 2003/0230980, which is incorporated byreference in its entirety. Examples of emissive and host materials aredisclosed in U.S. Pat. No. 6,303,238 to Thompson et al., which isincorporated by reference in its entirety. An example of an n-dopedelectron transport layer is BPhen doped with Li at a molar ratio of 1:1,as disclosed in U.S. Patent Application Publication No. 2003/0230980,which is incorporated by reference in its entirety. U.S. Pat. Nos.5,703,436 and 5,707,745, which are incorporated by reference in theirentireties, disclose examples of cathodes including compound cathodeshaving a thin layer of metal such as Mg:Ag with an overlyingtransparent, electrically-conductive, sputter-deposited ITO layer. Thetheory and use of blocking layers is described in more detail in U.S.Pat. No. 6,097,147 and U.S. Patent Application Publication No.2003/0230980, which are incorporated by reference in their entireties.Examples of injection layers are provided in U.S. Patent ApplicationPublication No. 2004/0174116, which is incorporated by reference in itsentirety. A description of protective layers may be found in U.S. PatentApplication Publication No. 2004/0174116, which is incorporated byreference in its entirety.

FIG. 2 shows an inverted OLED 200. The device includes a substrate 210,a cathode 215, an emissive layer 220, a hole transport layer 225, and ananode 230. Device 200 may be fabricated by depositing the layersdescribed, in order. Because the most common OLED configuration has acathode disposed over the anode, and device 200 has cathode 215 disposedunder anode 230, device 200 may be referred to as an “inverted” OLED.Materials similar to those described with respect to device 100 may beused in the corresponding layers of device 200. FIG. 2 provides oneexample of how some layers may be omitted from the structure of device100.

The simple layered structure illustrated FIGS. 1 and 2 is provided byway of non-limiting example, and it is understood that embodiments ofthe invention may be used in connection with a wide variety of otherstructures. The specific materials and structures described areexemplary in nature, and other materials and structures may be used.Functional OLEDs may be achieved by combining the various layersdescribed in different ways, or layers may be omitted entirely, based ondesign, performance, and cost factors. Other layers not specificallydescribed may also be included. Materials other than those specificallydescribed may be used. Although many of the examples provided hereindescribe various layers as comprising a single material, it isunderstood that combinations of materials, such as a mixture of host anddopant, or more generally a mixture, may be used. Also, the layers mayhave various sublayers. The names given to the various layers herein arenot intended to be strictly limiting. For example, in device 200, holetransport layer 225 transports holes and injects holes into emissivelayer 220, and may be described as a hole transport layer or a holeinjection layer. In one embodiment, an OLED may be described as havingan “organic layer” disposed between a cathode and an anode. This organiclayer may comprise a single layer, or may further comprise multiplelayers of different organic materials as described, for example, withrespect to FIGS. 1 and 2.

Structures and materials not specifically described may also be used,such as OLEDs comprised of polymeric materials (PLEDs) such as disclosedin U.S. Pat. No. 5,247,190 to Friend et al., which is incorporated byreference in its entirety. By way of further example. OLEDs having asingle organic layer may be used. OLEDs may be stacked, for example asdescribed in U.S. Pat. No. 5,707,745 to Forrest et al, which isincorporated by reference in its entirety. The OLED structure maydeviate from the simple layered structure illustrated in FIGS. 1 and 2.For example, the substrate may include an angled reflective surface toimprove out-coupling, such as a mesa structure as described in U.S. Pat.No. 6,091,195 to Forrest et al., and/or a pit structure as described inU.S. Pat. No. 5,834,893 to Bulovic et al., which are incorporated byreference in their entireties.

Unless otherwise specified, any of the layers of the various embodimentsmay be deposited by any suitable method. For the organic layers,preferred methods include thermal evaporation, ink-et, such as describedin U.S. Pat. Nos. 6,013,982 and 6,087,196, which are incorporated byreference in their entireties, organic vapor phase deposition (OVPD),such as described in U.S. Pat. No. 6,337,102 to Forrest et al., which isincorporated by reference in its entirety, and deposition by organicvapor jet printing (OVJP), such as described in U.S. patent applicationSer. No. 10/233,470, which is incorporated by reference in its entirety.Other suitable deposition methods include spin coating and othersolution based processes. Solution based processes are preferablycarried out in nitrogen or an inert atmosphere. For the other layers,preferred methods include thermal evaporation. Preferred patterningmethods include deposition through a mask, cold welding such asdescribed in U.S. Pat. Nos. 6,294,398 and 6,468,819, which areincorporated by reference in their entireties, and patterning associatedwith some of the deposition methods such as ink-jet and OVJP. Othermethods may also be used. The materials to be deposited may be modifiedto make them compatible with a particular deposition method. Forexample, substituents such as alkyl and aryl groups, branched orunbranched, and preferably containing at least 3 carbons, may be used insmall molecules to enhance their ability to undergo solution processing.Substituents having 20 carbons or more may be used, and 3-20 carbons isa preferred range. Materials with asymmetric structures may have bettersolution processibility than those having symmetric structures, becauseasymmetric materials may have a lower tendency to recrystallize.Dendrimer substituents may be used to enhance the ability of smallmolecules to undergo solution processing.

Devices fabricated in accordance with embodiments of the invention maybe incorporated into a wide variety of consumer products, including flatpanel displays, computer monitors, televisions, billboards, lights forinterior or exterior illumination and/or signaling, heads up displays,fully transparent displays, flexible displays, laser printers,telephones, cell phones, personal digital assistants (PDAs), laptopcomputers, digital cameras, camcorders, viewfinders, micro-displays,vehicles, a large area wall, theater or stadium screen, lightingfixtures, or a sign. Various control mechanisms may be used to controldevices fabricated in accordance with the present invention, includingpassive matrix and active matrix. Many of the devices are intended foruse in a temperature range comfortable to humans, such as 18 degrees C.to 30 degrees C., and more preferably at room temperature (20-25 degreesC.).

The materials and structures described herein may have applications indevices other than OLEDs. For example, other optoelectronic devices suchas organic solar cells and organic photodetectors may employ thematerials and structures. More generally, organic devices, such asorganic transistors, may employ the materials and structures.

The terms halo, halogen, alkyl, cycloalkyl, alkenyl, alkynyl, arylkyl,heterocyclic group, aryl, aromatic group, and heteroaryl are known tothe art, and are defined in U.S. Pat. No. 7,279,704 at cols. 31-32,which are incorporated herein by reference.

As used herein, the “active device area” of a device may refer to theportion of the device in which electrons, holes, and/or photons aregenerated or absorbed and may comprise one or more organic and/orsemi-conductor materials (such as organic semi-conductors or dopedsilicon). For organic electronic devices, the active device area maycomprise one or more organic layers. For example, the active device areaof an OLED may refer to the emissive area of the device (i.e. theportion of the device that emits light) and may include an organicelectroluminescent material. The active device area of a solar cell mayrefer to the portion of the device where photons are absorbed andelectrons are released (e.g. it may refer to the portion of the devicethat comprises a semi-conductor material). For a thin film battery, theactive device area may refer to the electrolyte and may comprise, forexample, lithium phosphorus oxynitride. These are just a few examples ofactive device areas of exemplary devices, and it should be appreciatedthat embodiments disclosed herein are not so limited.

As used herein, the term “approximately” may refer to plus or minus 10percent, inclusive. Thus, the phrase “approximately 10 mm” may beunderstood to mean from 9 mm to 11 mm, inclusive.

As used herein, a “barrier film” or “barrier layer” may refer to a layerof material that may be utilized to decrease the permeation of gases,vapors, and/or moisture (or other environmental particulates) into theactive device area of the device so as to increase lifetime and/orreduce performance degradation. In some embodiments, the barrier filmmay comprise a hybrid layer comprising a mixture of a polymeric materialand a non-polymeric material. As used herein, the term “non-polymeric”refers to a material made of molecules having a well-defined chemicalformula with a single, well-defined molecular weight. A “nonpolymeric”molecule can have a significantly large molecular weight. In somecircumstances, a non-polymeric molecule may include repeat units. Asused herein, the term “polymeric” refers to a material made of moleculesthat have repeating subunits that are covalently linked, and that has amolecular weight that may vary from molecule to molecule because thepolymerizing reaction may result in different numbers of repeat unitsfor each molecule. For example, in some embodiments, the barrier filmmay comprise a mixture of polymeric silicon and inorganic silicon.Examples of barrier films are described in more detail below.

As used herein, the “border area” (i.e. dead space) of the device maycomprise the combination of the “inactive device area” and the“non-device edge area.” As used in this context, the “thickness” of theborder area may refer to the distance from the device footprint to theedge of the border area (which may also comprise the edge of thesubstrate in some embodiments) in a direction that is perpendicular to aside of the device footprint.

As used herein, the term “comprising” is not intended to be limiting,but may be a transitional term synonymous with “including,”“containing,” or “characterized by.” The term “comprising” may therebybe inclusive or open-ended and does not exclude additional, unrecitedelements or method steps when used in a claim. For instance, indescribing a method, “comprising” indicates that the claim is open-endedand allows for additional steps. In describing a device, “comprising”may mean that a named element(s) may be essential for an embodiment, butother elements may be added and still form a construct within the scopeof a claim. In contrast, the transitional phrase “consisting of”excludes any element, step, or ingredient not specified in a claim. Thisis consistent with the use of the term throughout the specification.

As used herein, a “device” may comprise any component that may bedeposited (either as a single or multiple layers) over a substrate andmay provide a desired functionality based on the application of avoltage, current, or photon exposure (e.g. solar cell). The device maycomprise an “active device area” (where electrons, holes, and/or photonsare generated or absorbed) and an “inactive device area.” With referenceto an organic devices for illustration purposes, the “device” may referto the one or more organic layers, one or more insulating grid layers,electrodes, and any layers disposed between the electrodes as shown inthe examples of FIGS. 1 and 2. An example of a device is an OLED. Asused herein, the device does not include one or more electrical contactsthat may extend away from the active device area and the inactive devicearea. That is, for instance, any portion of one or more electrodes thatextends such that it is not disposed within the device footprint doesnot comprise a portion of the device (e.g. such portions may form anelectrical contact).

As used herein, the “device footprint” may refer to the total area ofthe “active device area” of the device and the “inactive device area” ofthe device. With reference to an organic device for illustrationpurposes, the device footprint may refer to the portion of the device inwhich one or more organic layers (i.e. the organic footprint) and/or oneor more insulating grid layers are disposed over the substrate.

As used herein, the “inactive device area” of a device may refer toportions of the device that comprises one or more layers of materials(such as organic layers) that are also included in the active area, butwhich does not comprise apart of the device where electrons, holes,and/or photons are generated or absorbed (i.e. it is not a part of theactive device area of the device). For example, with regard to an OLED,the inactive device area may include one or more organic layers and/or aportion of an electrode, but this portion of the device may not includeone or more of the other organic layers (or one or more electrodes) andtherefore does not emit light. The inactive device area is often, butnot always, the result of depositing an organic layer so as to extendbeyond the edges of one of the electrodes to prevent or reduce thelikelihood of shorting. In some instances, an insulating layer (e.g.“grid layer”) may be disposed over the substrate and a portion of anelectrode so as to electrically insulate the conductive layers of thedevice. These areas generally do not emit light and therefore wouldcomprise a portion of the “inactive device area.” In most instances, theinactive device area of the device is disposed adjacent to one or moresides of the active device area. However, embodiments are not so limitedand in some instances a device may have inactive device areas disposedbetween active device areas (e.g. an AMOLED display may havenon-emissive areas between pixels that may comprise: inactive deviceareas”).

As used herein, a “non-device edge area” may refer to the area aroundthe device footprint—that is, the portion of a product that does notinclude the “active device area” or the “inactive device area” of thedevice. For example, the non-device edge area may not comprise one ormore of the layers that of the active device area of the device. Withreference to organic electronic devices, the non-device edge area mayrefer to the portion of product that typically does not comprise anorganic layer or an insulating layer (such as a grid layer that isdisposed over one of the electrodes of the OLED). For instance, thenon-device edge area may refer to the non-emitting areas of the OLEDthat do not comprise a part of the inactive device area (e.g. Thenon-device edge area may include the portions of the product in whichone or more barrier films or layers are disposed along a side of thedevice footprint.

As used herein, the “perpendicular length” of the barrier film may referto the distance from a portion of the barrier film that is disposedclosest to the device footprint (e.g. adjacent to the active device areaor inactive device area in some instances) to another portion of thebarrier film that is disposed farthest away from the device footprint(e.g. an edge of the barrier film) in a direction that is perpendicularto the side of the device footprint and parallel to the surface of thesubstrate that the device is disposed over. In other words, theperpendicular length may be a measure of the distance that the barrierfilm extends away from the device footprint. The reason for utilizingthe “side” of the device footprint as determining the perpendicularlength is to generally exclude the corner effects, where the length ofthe barrier film may vary because of the shape of the device footprint.Thus, in general, the perpendicular length may correspond to the lengthof the barrier film disposed so as to provide resistance to thehorizontal ingress of moisture (and other contaminants) into the activedevice area.

As used herein, the term “product” is used to be an inclusive term thatcan comprise a device (such as an OLED, thin film batter, solar cell,etc.) with additional components or components (e.g. barrier layersdisposed thereon), a plurality of devices disposed or arranged on asingle substrate or multiple substrates, or a single device. Thus, insome instances a “product” may be used interchangeable with “device” or“electronic device.” A product may include consumer devices (as definedabove).

It should be noted that although embodiments described below may makereference to organic devices such as OLEDs, embodiments are not solimited. The inventors have found that barrier films comprising disposedas described below as an edge sealant may be generally used in any thinfilm electronic device, particularly those that may have a component (orcomponents) that is sensitive to environmental permeants such as watervapor. Moreover, the inventors have found that the disposition andconfiguration of a barrier film as claimed herein used as an edgesealant may provide devices where the device may be disposed within 3.0mm (preferably less than 2.0 mm; more preferably less than 1.0 mm; andmore preferably less than 0.1 mm) of an edge of the substrate, whilestill providing adequate device performance and lifetime. This reductionin the distance between a side of the device and an edge of thesubstrate may reduce the size of the non-devices of such devices andthereby potentially reduce the overall size of an electronic device thatcomprises the barrier film disposed as described herein. In someinstances, that active device area of a device may be disposed within0.1 mm from the edge of the substrate (which may further reduce theappearance of any border area, whether created by the non-device edgearea (e.g. from a barrier layer) or inactive device area of the device(e.g. from a grid layer).

It should be noted that although embodiments described below may makereference to organic devices such as OLEDs, embodiments are not solimited. The inventors have found that barrier films as provided hereinmay be generally used in any thin film electronic device, particularlythose that may have a component (or components) that is sensitive toenvironmental permeants such as water vapor. Moreover, the inventorshave found that the exemplary barrier film may enable devices to bedisposed within 3.0 mm (preferably within than 2.0 mm; and morepreferably within 1.0 mm) of an edge of the substrate, while stillproviding adequate device performance and lifetime.

In general, electronic devices having moisture sensitive electroniccomponents (such as water vapor sensitive electrodes) may degrade uponstorage because of the atmospheric conditions. The degradation may be inthe form of dark spots caused by the ingress of water vapor and oxygenvertically through the bulk of a thin film encapsulation (TFE) (orthrough particles embedded in the TFE), or by the ingress of water vaporand oxygen horizontally through the edge of the TFE. The TFE may also bereferred to herein as a barrier layer or barrier film. The edge ingressof the water vapor typically occurs either via the horizontal permeationof the permeants (e.g. water vapor molecules) through the TFE itself(see, e.g., FIG. 6, 604 described below) or via the horizontalpermeation of the permeants through the interface of the TFE with theunderlying substrate (see, e.g., FIG. 6, 605 described below). Theinventors have thereby found that it is preferred that a TFE providingan edge seal for an electronic device reduces both types of horizontalpermeations (i.e. permeation across the layer itself and permeation atthe interface between the layer and the substrate). In this regard,embodiments provided herein comprise an edge seal that may provide forimproved performance and may be used for electronic devices that may besensitive to atmosphere conditions, such as moisture.

Previous edge seals that were widely in use utilized multilayerbarriers. For example, many devices comprised multilayer barriers thatconsisted of alternate layers of inorganic and polymer films. Thesebarriers work on the principle of delaying the permeant molecules fromreaching the device by forming a long and tortuous diffusion path. Someexamples of these multilayer barriers will be described below.

One of the prior methods for encapsulating a device with a multilayerbarrier utilizes the same mask for both the inorganic and the polymerfilms; however, the size of the mask is larger than the footprint of adevice so as to provide some edge ingress barrier (and also to allow formask alignment tolerance). Assuming an alignment tolerance of 500 μm(which is reasonable for most fabrication processes) for both the devicemask (e.g. the mask that may be used to deposit the layers that forththe active device area, inactive device area, and/or other componentssuch as electrodes) and the encapsulation mask (e.g. the mask used todeposit the inorganic and the polymer films), this implies that theencapsulation mask should be about 1.0 mm larger than the device mask soas to prevent any device exposure when both the deposition of the deviceand the alignment of the encapsulation mask is off in the worst casescenario. It may also be assumed that the thickness of the inorganicfilm of the multilayer barrier is about 50 nm, and the thickness of thepolymer film of multilayer barrier is about 800 nm, as is typically thecase for such devices. FIG. 3 provides an example of such a device.

FIG. 3 shows a product 309 that comprises a substrate 319, a device 301having a device footprint (which may include an active device area andan inactive device area) disposed over the substrate 310, and aplurality of inorganic layers 302 and polymer layers 303 thatencapsulate the device 301. The product 300 of FIG. 3 shows a multilayerbarrier encapsulation process consisting of a 5-layer stack thatincludes five inorganic layers (302) with four polymer layers (303)disposed between the organic layers (i.e. sandwiched between). Ingeneral, this type of masking and deposition method may be relativelysimple to fabricate because it uses a minimum number of mask changes(thus adding minimum processing time for fabrication)—i.e. after thedevice 301 and corresponding components are deposited on the substrate,both the inorganic layer and the polymer layer may be deposited througha single mask. As shown in FIG. 3, this exemplary multi-layer barrierprovides a direct path (i.e. Path-1 shown by the arrow 304) for watervapor to travel across the polymer layer 303 horizontally and reach thedevice 301 of product 300 (e.g. an environmentally sensitive electrodeor organic layer) by permeating across just one inorganic layer 302(i.e. the inorganic layer disposed adjacent to the device footprint ofthe device 301). Thus, the edge seal provided by this type of multilayerbarrier as shown in FIG. 3 is mostly dependent on the permeation rate ofwater vapor across the polymer material 303 (which is typically higherthan the permeation rate of the inorganic material). In general, fordevice designs such as those shown in FIG. 3, to achieve suitable deviceperformance and lifetime, such a device would use a footprint for theencapsulation layer (e.g. the polymer 303 and inorganic 302 layers) thatis much larger than the footprint of device 301. That is, the use of asingle mask size for both inorganic 302 and organic 303 films that islarger than the device footprint to deposit the edge seal may not be aworking or practical solution to providing a device with a minimalamount of border area (i.e. dead space). This is further illustrated inthe example provided below.

The value of the diffusion constant of water vapor in polyacrylatepolymer (a commonly used encapsulation material) at 25° C. can becalculated by using the diffusion constant (“D”) of polyacrylate polymerat 38° C. as calculated by G. L. Graff, R. E. Williford, and P. E.Burrows, Mechanisms of vapor permeation through multilayer barrierfilms: Lag time versus equilibrium permeation, J. Appl. Phys., 96 (4),pp. 1840-1849 (2004) (i.e. the diffusion constant (D) at 38° C.˜8.5×10⁻⁹cm²/sec), which is incorporated herein by reference in its entirety, andutilizing the activation energy of Water vapor in such a polymer as wascalculated by Z. Chen, Q. Gu, H. Zou, T. Zhao, H. WANG, MolecularDynamics Simulation of Water Diffusion Inside an Amorphous PolyacrylateLatex Film, Journal of Polymer Science: Part B: Polymer Physics, Vol.45, 884-891 (2007) (found to be approximately equal to 13 kJ/mole),which is also incorporated herein by reference in its entirety. In thismanner, the diffusion constant of water vapor in polyacrylate polymer at25° C. can be estimated to be ˜6.8×10⁻⁹ cm²/sec. Using this diffusionconstant, the lag time of water vapor diffusion through Path-1 (304) forthe device 300 shown in FIG. 3 can be estimated. As used in thiscontext, the lag time (t_(l)) refers to the approximate diffusion timeof permeant molecules (e.g. water vapor molecules) across a distance(f), and is related to the diffusion constant of the material by therelation given by: t_(l)=t²/(6D), as shown by Graff et al., Mechanismsof vapor permeation through multilayer barrier films: Lag time versusequilibrium permeation, J. Appl. Phys., 96 (4), pp. 1840-1849 (2004).Using the diffusion constant (D) of water vapor in polyacrylate polymercalculated above, the lag time at 25° C. may be calculated to be closeto 70 hours for a path length of 1.0 mm. That is, for the exemplaryencapsulation method shown in FIG. 3, it would generally take watervapor approximately 70 hours at room temperature to reach the inorganiclayer 302 adjacent to the footprint of device 301 of the product 300when traveling horizontally along Path-1 (304). Once the permeantcrosses the polymer layer 303 along Path-1 (304), it need only permeateacross just a single inorganic film layer 302 (which typically has athickness of approximately 50 nm) to reach the footprint of device 301.The permeants can then reach the active device area quickly throughdefects (e.g. pinholes, cracks, particles, etc.) and cause damage.Needless to say, this design may result in device degradation that isunacceptable for an intended purpose or application.

Another approach using a multilayer barrier to encapsulate the device ofa product is shown in FIG. 4. The product 400 comprises a substrate 410,a device 401 having a device footprint (which may comprise an activedevice area and an inactive device area) disposed on the substrate 410,and a plurality of inorganic layers 402 and polymer layers 403 disposedover the device 401. As shown, the device 400 uses an inorganic layermask (used in depositing the inorganic layers 402) that is larger thanthe polymer layer mask (used in depositing the polymer layers 403) suchthat an inorganic layer 420 covers the side of the polymer layers 403.As shown in FIG. 4, even in this approach, the horizontal ingress path(i.e. Path-1 shown by the arrow 404) is the easiest path for water vaporto travel horizontally and reach the device 401 of the product 400. Thebarrier layer created by this method for the horizontal ingress path(i.e. Path-1 (404)) for the permeation of water vapor (or otherpermeants) for a 5-layer stack design is equivalent to a bi-layerbarrier consisting of a first inorganic layer (typically 50 nm inthickness and disposed adjacent to the footprint of device 401), asecond polymer layer (typically 800 nm in thickness), and a thirdinorganic layer (typically 200 nm in thickness labeled as 420 in FIG.4). Therefore, as shown, the resistance to horizontal permeation thatthis type of multilayer barrier design provides is equivalent to amultilayer barrier consisting of two inorganic layers and a polymerlayer disposed in-between (e.g. sandwiched between). Thus, while thevertical ingress comprises five inorganic barrier layers 402 and fourpolymeric layers 403, the horizontal ingress provides a much easierpermeation path that may determine the lifetime or degradation of thedevice 401.

Yet another approach using a multilayer barrier design for a product isshown in FIG. 5. The product 500 comprises a substrate 510, a device 501having a device footprint (which may comprise an active device area andan inactive device area) disposed over the substrate 510, and aplurality of inorganic 502 and polymer 503 layers disposed over andalong the sides of the footprint of device 501. The barrier layers aredeposited using increasingly larger sized masks for successive polymer503 and inorganic layers 502. In this approach the water vapor travelinghorizontally along Path-1 (shown by the arrow labeled 504) in the edgeregion of the product 500 faces the entire multilayer stack in its pathbefore reaching the device 501 (unlike the products shown in FIGS. 3 and4 described above). In this case, the edge seal provided by themultilayer barrier comprising layers 502 and 503 to the water vapor (orother permeant) traveling across the bulk of the barrier horizontallyalong Path-1 (504) is equivalent to the seal provided by the multilayerbarrier to the water vapor traveling vertically across the bulk of thebarrier (i.e. along Path-3 shown by the arrow 507).

However, even though the thickness of the polymer film per unit stack inthe horizontal direction (typically ˜1.0 mm each as shown in FIG. 5) ismuch greater than that of the thickness in the vertical direction(typically ˜0.8 μm each), the resistance to water vapor diffusion acrossthe layers is quite similar in both of the directions. The reason isthat, as described by G. L. Graff, Mechanisms of vapor permeationthrough multilayer barrier films: Lag time versus equilibriumpermeation, J. Appl. Phys., 96 (4), pp. 1840.4849 (2004), the effectivethickness to calculate the length (t) in the lag time calculation(t_(l)=l²/(6D)) is determined by either the thickness of the polymerfilm or the spacing of the defects in the inorganic film. In thevertical direction i.e. along Path-3 (507)), the defect spacing of theinorganic film when assuming good permeation properties of the barrierlayers (e.g. on the order of couple hundred microns) is much larger thanthe polymer film thickness. In the horizontal direction (i.e. alongPath-1 (504)) the opposite is the case that is, the defect spacing ofthe inorganic film is smaller than the polymer film thickness.Therefore, it is reasonable to assume that the edge ingress (e.g. Path-1(504)) for the product 500 fabricated using a progressively increasingmask size approach is comparable to the vertical permeation (i.e. alongPath-3 (507)) in the multilayer barrier.

Although two ingress paths were described above i.e. horizontal Path-1(504) and vertical Path-3 (507)—there is another potential ingress pathfor permeants (Path-2 shown by the arrow 505). Path-2 (505) correspondsto water vapor permeation along the interface of the inorganic film withthe substrate 510. However, even if the interface permeation alongPath-2 (505) for the inorganic film is worse than bulk permeation in theinorganic film, the length of the ingress path is rather large acrossthe interface (e.g. approximately 5.0 mm as shown in FIG. 5), which istypically a large enough distance to make it a secondary ingress path incomparison to the ingress along Path-1 (504) (that is, permeants aremore likely to reach the device 501 through Path-1 (504) before theyreach the device 501 through Path-2 (505). One of the problemsassociated with the edge encapsulation approach shown in FIG. 5 of usingprogressively larger masks is the complexity associated with using theplurality of mask changes during fabrication that is, each time a newmask is used during the fabrication process, it requires that the maskbe properly aligned (adding to the time and expense of the process). Inaddition, the perpendicular length (e.g. footprint) of the barriercomprising the multiple inorganic 502 and polymer 503 layers is large(i.e. approximately 5.0 mm wider than that of the device 501 of theproduct 500 on each side). This may thereby increase the non-active edgearea of the product around the footprint of device 501, which may, forinstance, correspond to the border area of the device (i.e. non-emittingregions for an OLED), and also unnecessarily increases product size toaccommodate the multiple barrier layers. Thus, the inventors have foundthat when attempting to reduce the edge ingress problem with aninorganic-polymer multilayer barrier, a long diffusion length may beneeded so as to delay the water vapor (or other permeant) per in thehorizontal direction (e.g. along Path-1 (504) or Path 2 (505)) along theedge of the product 500.

Thus, as described above, when attempting to use an inorganic-polymermultilayer barrier as an edge sealant, it is typically necessary toprovide long diffusion lengths so as to delay the permeation of watervapor (or other particulate) across the barrier layers in the horizontaldirection along the edge of the product whether across the bulk of thematerial or along the interface). The techniques and configurationsutilized in these multilayer barrier designs simply cannot delay thisedge ingress of permeants (e.g. along the horizontal paths) unless theselayers are several millimeters thick (i.e. extend away from the side ofthe device by several millimeters). However, using edge seals that areseveral millimeters thick creates a relatively large non-device edgearea of the product (corresponding to the barrier layer that forms theedge seat around one or more sides of the device). This non-device edgearea may then require that the overall size of the product (includingthe total size of the device footprint and the non-active device area)is substantially larger than the device itself, and may thereby createnoticeable deficiencies in performance or appearance (e.g. by creatingnon-emitting area for light emitting devices). The inventors havediscovered techniques and configurations for using a barrier film as anedge seal on devices that have components that may be susceptible topermeants (such as water vapor) that reduces or eliminates thenon-device edge area of the product created by the edge seal (or atleast minimizes the non-device edge area of the product when taking intoconsideration manufacturing and other errors such as cutting tolerances,etc.), while also providing sufficient protection for the device toreduce degradation and increase lifetime based on the ingress ofpermeants into the active device area of the device.

In this regard, and as shown and described with respect to FIGS. 7 and 8below, the inventors have discovered that material that may forthsuitable barrier film layers may grow on vertical surfaces as well ashorizontal surfaces. The ability to dispose barrier film material onvertical surfaces (such as the sides of the device and/or the substrateof a device) may enable the device (whether the active device area orthe inactive device area of the device) to extend up to, and including,the edge of the substrate (thereby reducing or eliminating non-deviceedge area) because the barrier film need not necessarily be disposedover a surface of the substrate and along the side of the device (e.g.along the side or extending from the device footprint). Instead, in someembodiments, the barrier film may be disposed along a vertical side ofthe device and/or the substrate so as to create an edge seal thatextends more or less in the vertical direction along the device andsubstrate (rather than horizontally away from the device).

Provided below is a description of the experiments conducted by theinventors in determining the applicability of disposing barrier filmsalong the vertical surface of a substrate and/or device (e.g. a side ofthe active device area or inactive device area). The inventors firstmounted a piece of silicon wafer vertically on the substrate electrodein a plasma enhanced chemical vapor deposition (PE-CVD) system, as shownin the photograph of FIG. 6. The height of the silicon wafer in thisexperiment was approximately 1.0 cm. A barrier film was then grown bydepositing a hybrid barrier film that comprised a mixture of a polymericmaterial and a non-polymeric material. Exemplary deposition methods,conditions, and materials for the barrier layer comprising a hybridmaterial are described below, as well as, for example, in U.S. Pat. No.7,968,146, filed Oct. 31, 2007; U.S. patent application Ser. No.11/783,361, filed Apr. 9, 2007; U.S. patent application Ser. No.12/990,860, filed May 5, 2009, and U.S. Prov. App. No. 61/086,047, eachof which is hereby incorporated by reference in its entirety for allpurposes. It should be appreciated that any suitable material may beused for the barrier film in embodiments provided herein, and thebarrier film may generally be deposited in any suitable manner so as toform an edge seal as described herein, unless otherwise specified, aswould be understood by one of ordinary skill in the art after readingthis disclosure.

The inventors also conducted an experiment to determine the extent towhich the exemplary barrier films could be deposited indirectly over asurface (that is, a surface that was not substantially perpendicular orexposed to the deposition material) using existing deposition techniquesand apparatuses. With reference to FIG. 7, an exemplary fabricationprocess and apparatus will be described that was used by the inventorsin depositing the barrier film over a substrate. As was notedpreviously, any type of deposition process may be used in accordancewith embodiments provided herein. In this exemplary case, the inventorsused a PE-CVD apparatus and deposition technique. In general, a PE-CVDapparatus (such as apparatus 700 shown in FIG. 7) comprises a reactionchamber designed to contain a vacuum and a vacuum pump connected to thereaction chamber to create and/or maintain the appropriate pressure. AnN₂ gas tank may be used to provide N₂ gas for purging the apparatus 700.For handling the flow of gases, the apparatus 700 may also includevarious flow control mechanisms (such as mass flow controllers, shut-offvalves, and check valves), which may be under manual or automatedcontrol. A precursor material source(s) may be utilized to provide aprecursor material (e.g. HMDSO in liquid form or one or more of thematerials described in more detail below), which is vaporized and fedinto the reaction chamber. In some cases, the precursor material may betransported to the reaction chamber using a carrier gas, such as argon.A reactant gas tank provides the reactant gas (e.g. oxygen), which isalso fed into the reaction chamber (e.g. via gas feed 705). Theprecursor material and reactant gas flow into the reaction chamber tocreate a reaction mixture. The pressure inside the reaction chamber maybe adjusted further to achieve the deposition pressure.

The reaction chamber includes a substrate electrode 701 and a bottomelectrode 704 mounted on electrode standoffs, which may be conductors orinsulators. The electrode mesh 703 is disposed between the substrateelectrode 701 and the bottom electrode 704 and is supplied with RF powerto create plasma conditions in the reaction mixture. Reaction productscreated by the plasma are deposited onto the substrates 702. The bottomelectrode 704 is also shown as having a gas feed through 705 where gasmay enter the reaction chamber. The reaction is allowed to proceed for aperiod of time sufficient to deposit a barrier film layer (e.g. a hybridlayer of material such as those described below or any other suitablelayer of material) on a substrate. In general, the reaction time willdepend upon various factors, such as the position of the substrate withrespect to the electrodes, the type of material (e.g. barrier filmmaterial) to be deposited, the reaction conditions, the desiredthickness of the barrier film layer, the precursor material, and thereactant gas. A person of ordinary skill in the art would understandthat these conditions may be varied and/or tuned to achieve a depositedfilm layer having desired properties depending on the particularapplication. The reaction time is typically between 5 seconds and 5hours, hut longer or shorter times may also be used depending upon theapplication.

As shown in FIG. 7, there is a distance (“L”) between the depositionlocation on the sample substrates 702 and the RF powered mesh electrode703 in this exemplary PE-CVD apparatus 700. As this distance L isincreased, fewer radicals reach the substrates 702 and therefore thedeposition rate decreases (i.e. the rate of growth of the depositedmaterial on the substrates 702 decreases). After performing the PE-CVDprocess, the distance L for each location of the substrate wasdetermined as well as the thickness of the deposited layer at thatlocation. The exemplary deposition process utilized a precursor materialcomprising HMDSO and oxygen as a reactant gas. The conditions for theexemplary deposition process are detailed in table 1 below. Throughoutthe deposition process the positions of the electrodes and the substratewere kept constant. The results of these tests are illustrated in theplot in FIG. 8, which shows that the semi-logarithmic scale of filmthickness (log(t)) is dependent on the square of distance L. For thisexample, as shown FIG. 8 the log(t) decreases linearly with L², having anegative slope of 0.00409. Therefore, based on these results, theinventors determined that the barrier film can be disposed on (e.g. growon) surfaces that are not disposed such that the surface is directlyexposed to the plasma (i.e. the surfaces that do not directly see or arenot perpendicular to, the plasma). Therefore, the inventors found thatthe device (e.g. the active device area and/or inactive device area ofthe device) could be sufficiently encapsulated even when the deviceextends at or near the edge of the substrate by providing a portion ofthe layer on the vertical surfaces of the device and/or the substrate.

TABLE 1 Process conditions for film deposition on the Si wafer in FIG.6. Oxygen HMDSO Power density Pressure (sccm) (sccm) (mW/cm²) (mTorr) 331.25 384 120

FIG. 9 shows the cross-section of an exemplary product 900 in which thedevice 901 is disposed up to the edge of the substrate 910. As shown,the exemplary product comprises a substrate 910 having a first surface911, a first side 912, and a first edge 913 where the first surface 911meets the first side 912; a device 901 that is disposed on the firstsurface 911 of the substrate 910 and having a side 902; and a barrierfilm 903. As shown, the device 901 extends up to the first edge 913 ofthe substrate 910 such that the side 902 of the device 901 is disposedover the first edge 913 of the substrate 910 (or is within a smalldistance—e.g. less than 3.0 mm—from the edge 913). The barrier film 903in the exemplary device 900 is shown as covering (e.g. being disposedover) the first edge 913 of the substrate 910, a portion of the firstvertical side 912 of the substrate 910, and the side 902 of the device901 that is disposed over the edge 913 of the substrate 910 (or within asmall distance of the edge 913). Such an encapsulation (or edge seal insome instances) of the device 901 of the product 900 may be accomplishedby depositing (e.g. growing) the device 901 on the substrate 910 first,then cutting the substrate 910 and/or the device 901, then depositingthe barrier film 903 so as to encapsulate the device 901 by mounting theproduct 900 in the deposition chamber such that the edges of thesubstrate 910 are not (as much as possible) covered with any type ofmask, thereby allowing the barrier film to be deposited (and therebygrow) on the vertical side and edges of the substrate 910 and/or thevertical side(s) of the device 901 during barrier film deposition.

In this exemplary embodiment, the water vapor (or other permeant)travelling horizontally along Path-1 (shown by the arrow labeled 904) inthe edge region of the product 900 permeates through the bulk of thebarrier film 903 material to reach the device 901. Therefore, if thebarrier film 903 comprises a material that has a sufficient diffusioncoefficient, the perpendicular length (or thickness) of the barrier film903 extending away from the side of the device 901 in this location maybe relatively small (e.g. less than 3.0 mm; preferably less than 1.0 mm;and more preferably less than 0.1 ram). The inventors have found thatfor some materials (such as some of the hybrid layers comprising amixture of polymeric and non-polymeric material described herein), theperpendicular length of the barrier film 903 may be less than 0.1 mm andstill provide a sufficient edge seal for adequate device lifetime. Asdescribed above, providing a barrier film 903 with a short perpendicularlength may allow for the side (e.g. side 902) of the device 901 to bedisposed within a corresponding distance (e.g. in this example within0.1 mm) of the edge 913 of the substrate 910. Moreover, the ingressalong Path-2 (shown by the arrow labeled 905) corresponding to thediffusion across the interface between the barrier film 903 and thesubstrate 910 in the edge region of the product 900 can be extendedalong the vertical side of the substrate 910. In this manner, Path-2(905) (which typically has a higher diffusion coefficient than the bulkdiffusion coefficient of the barrier film 903) may be lengthened withoutincreasing the perpendicular length of the barrier film 903 extendingaway from the side of the device 901. That is, by disposing the barrierfilm 903 further down the vertical side of the substrate 910 (e.g.covering more of the side 912 of the substrate 910), the length of theingress Path-2 (905) may be extended by a corresponding distance.Increasing the length of the ingress path may increase the permeationtime and thereby the lifetime of the device (at least with regard toenvironmental degradation). Thus, unlike embodiments where the barrierfilm 903 is disposed over the first surface 911 of the substrate 910, inthis example Path-2 (905) may be lengthened without having topotentially increase the non-device edge area of the product (whichresults when the perpendicular length of the barrier film 903 extendingaway from the side of the device 901 is increased). The barrier film 903may extend along the side 912 of the substrate 910 to any suitabledistance. The inventors have found that in some embodiments, it may bepreferred that the barrier film 903 comprising a mixture of a polymericand non-polymeric material may extend at least 0.1 mm along the side 912of the substrate 910 (preferably at least 1.0 ram and more preferably atleast 3.0 ram).

In general, some embodiments provided herein may enable electronicdevices to reduce or eliminate the non-device edge area. That is,embodiments may enable at least a portion of the perimeter of the device(i.e. an edge of the device) to overlap with an edge of the substrate itis disposed over (or be disposed within a small distance of the edge).In some embodiments, this may be enabled by depositing the barrier filmon both the top and the side of the device (e.g. over an organic layerof an OLED) and also extending the barrier film to cover a portion of aside of the substrate. It should be noted that the barrier film may havea certain thickness along the side of the substrate (i.e. the barrierfilm may extend down the side of the substrate in a direction away fromthe surface on which the device is disposed over a certain distance).There may also be additional materials disposed over the top of thebarrier film and/or over the portion of the barrier film covering theedge of the substrate in some embodiments.

In addition to some of the advantages noted above, another advantage maybe provided by some embodiments based on disposing the barrier film overthe vertical side of the substrate. This vertical surface may not havebeen exposed to any coating or surface treatment during any of the otherdeposition process step (e.g. when depositing the device or othercomponents, materials may not have also be deposited onto the side ofthe substrate) and therefore the barrier film may form a very dense,high-quality interface with the surface of the vertical side of thesubstrate. This dense, high-quality interface may thereby decreasepermeation across the interface between the barrier film and thesubstrate, effectively increasing the lifetime of the device and/orreducing degradation of the device (or enabling the barrier film toextend a shorter distance along the side of the side of the substrate).

Embodiments provided herein may in general use any suitable substrate,such as glass or flexible substrates such as metal foils and plastics.It is generally preferred that the vertical sides of the device and (atleast a portion of) the substrate have good coverage by the barrierfilm. Certain processes may used to fabricate such devices that willpromote such behavior of the barrier film, some of which are providedbelow.

In some embodiments, the top side of the device may be further protectedby placing/laminating a layer of materials that have good barrierproperty. These materials may include, by way of example only, glass,metal foil, and/or barrier coated plastic (i.e. a plastic materialcoated with a barrier film on one or more surfaces such as a hybridlayer comprising a mixture of polymeric and non-polymeric material).This approach may be particularly preferred when particles/contaminantsare present on the top surface of the device.

In some embodiments, additional protection may be provided along a sideof the substrate. For example, the side of an OLED device may beprotected from moisture and oxygen by the barrier film encapsulationaround the side of the device, which extends along a portion of a sideof the substrate. A second barrier film layer or other encapsulationcould also be applied to the side of the substrate to further enhancethe permeation property of the device. Furthermore, as was noted above,other coatings and materials may be applied to the top of the barrierfilm encapsulation and/or sides of the barrier film at the substrate toprovide functions such as mechanical protection, special texture forholding (e.g. coupling) components to the device or substrate, or otheractive functions (e.g. sensing). In some embodiments, it may bepreferred that these extra materials also have good permeationproperties as well.

Embodiments provided herein that may comprise a thin film encapsulateddevice may provide the advantage of having no non-device edge areas (ora limited/reduced amount of non-device edge area) on not only threesides of the device (as shown in the experimental device fabricated bythe inventors described below), but such devices could also have no (ora limited amount of) non-device edge areas on all four sides (or more)around the device. In some such embodiments, the electrical contactpoints may be moved toward the center of the device (i.e. the activedevice area) rather than being disposed on an edge. This would, forinstance, allow devices such as lighting panels or displays to be easilytiled because there may not be a noticeable non-active (i.e.non-emitting) area between the active device areas of each device.However, as described in more detail below, embodiments are not solimited and the electrical contacts could be disposed along one or moresides of the substrate. A further advantage of some of the embodimentsprovided herein is that a repeatable bus line design could be used on alarge size substrate such that the device (e.g. a lighting panel) couldbe cut so as to include a single pattern or Multiple repeats of thepattern depending on the device size that was desired. Another potentialadvantage, particularly for products that comprise an OLED panel, isthat such products may enable electronic gadgets (such as a smart phone,tablet or notebook computer, TV, etc.) to have no (or a minimum)non-emitting areas at the gadget level. In electronic gadgets thatcomprise a limited non-device edge area, the edge (and/or sides) of thedevice may be exposed (but protected by a barrier film). However, asmentioned above, embodiments provided herein are not limited to organicdevices such as OLEDs, but could comprise any device or component thatcomprises a thin film barrier layer. Some other electronic devicesinclude solar cells, thin film batteries, and organic electronics.

As noted above, embodiments provided herein may comprise many types ofconsumer electronics devices (or components thereof). The products thatComprise a limited amount (or no) non-device edge areas around thedevice, such as the examples described herein, may enable theimplementation of consumer electronics devices having no frame (at theelectronics device level) at least around part of the device perimeter.An example is illustrated in FIG. 12( a), which shows an exemplarySmartphone design that has a display that extends to the edge of theproduct (without a non-device edge area disposed around any of the sidesof the display). In this design, all four edges of the phone have noframe or non-device edge area. This design is provided by having thehousing foot-print no larger than the display panel footprint, asillustrated in FIG. 12( b). In other design embodiments, not all foursides of the consumer electronics devices may comprise a side of thedevice (i.e. there may be one or more sides that have a non-device edgearea and/or a frame extending outside of the footprint of the display).

In some embodiments, a method for fabricating a product such as theexemplary embodiment shown in FIG. 9 may comprise the following processsequence: 1) scribing the back surface of substrate (i.e. the surface ofthe substrate on which the device is not disposed on); 2) disposing(e.g. growing) the device on the front surface of the substrate (e.g.the surface opposite the back surface); 3) breaking the substrate at thepre-scribed places to expose the vertical sides of the device andsubstrate; and 4) applying a barrier film encapsulation to cover boththe side of the device (and the top in some embodiments) and the edgeand at least a portion of a vertical side of the substrate.

The process described above is provided as one example of how such anexemplary device may be fabricated. However, as noted above; embodimentscomprising a barrier film that covers a portion of the edge and side ofthe substrate (as well as a side of the device) may be fabricated usingany suitable method as may be understood by one of ordinary skill in theart after reading this disclosure. For example, the inventors havediscovered that some embodiments may comprise any of the following:Rather than scribing and/or cutting the substrate and/or device, a smallsubstrate may be used (i.e. a substrate with a small surface for thedevice to be disposed on). The footprint of the device may be largerthan the surface of the substrate resulting in a device that extends tothe edge of the substrate. Both the substrate and the device may havevertical sides exposed that may be covered when the barrier film is thedeposited.

Another exemplary method of fabricating a product may be to dispose thedevice (e.g. grow the layer(s) of the device) without pre-scribing thesubstrates. After the device (such as an organic layer of an OLED) isdeposited, the side of the device and at least a portion of a side ofthe substrate may be exposed by anyone of: scribing into the substrate;laser ablating the device and the substrate, or any other suitablemethod. The barrier film may then be deposited so as to cover the sideof the device and at least a portion of the edge and exposed side of thesubstrate. In some embodiments, such as when flexible substrates such asmetal foils or plastics are used, a simple method of exposing a side ofthe substrate and/or device side is to use scissor cutting (or any othercutting technique). The barrier film may then be deposited so as tocover the side of the device and at least a portion of the edge andexposed side of the substrate.

Electrical Connections

As described above, embodiments provided herein using thin filmencapsulation may provide the ability to make products (such as thosecomprising an OLED display) with the device(s) very close to the edge ofthe substrate. This may provide, for example, truly borderless (or nearborderless) displays, either for viewing as a single display, or whentiling multiple devices to make a larger display system. Although theexamples provided below will be described with reference to a display,embodiments providing electrical contacts to the device(s) disposed onthe substrate may be equally applicable to other types of devices, suchas the types of devices provided as examples herein (e.g. solar cells,thin film batteries, organic electronic devices, etc).

One potential issue for such borderless devices (i.e. devices with no,or reduced, non-device edge area around one or more sides of the device)such as displays is how to provide the necessary electrical drive to thedevices (particularly for displays that utilize both row and columnsignals). In a conventional display, these signals may be applied to thedisplay by connections close to the display edge, with or withoutintegrated functionality to multiplex these signals, provide scandrivers, etc., through the use of thin film transistors (TFTs)fabricated on the substrate or through integrated circuits bonded to thesubstrate near the display edge.

Provided below are two exemplary methods of providing electronicconnections for a truly borderless (or near borderless) display. In eachof these examples, the general concept is to connect the row and columnelectrodes on the front of the display with electrical connections onthe back of the display, so that connectors and drive circuitry (e.g.portions of the electronic package of the device) may be applied to theback surface of the display. In this manner, these components will bedisposed within the area (i.e. footprint) of the substrate and/ordevice, and will not require or create a non-device edge areas or aborder/frame around the device. In general, the exemplary methodsprovided below would preferably be performed prior to backplanefabrication and frontplane fabrication, although embodiments may not beso limited.

The first exemplary embodiment comprises the use of vias fabricated intothe substrate from the front to the back surface of the substrate. Thisis illustrated in FIG. 10, which shows a substrate 1010 having a front(or top) surface 1011 and a back (or bottom) surface 1020, and thatcomprises a plurality of micro-holes 1002 drilled through the glass (orother suitable substrate material) substrate 1010. These vias (e.g.micro-holes 1002) can be filled with conductive material (such as metal)to provide electrical connectivity between row or column lines on thedisplay front surface 1011 with electrical connections on the backsurface 1020 of the display. The micro-holes 1002 could be near thedisplay edge 1012 (as shown) or disposed anywhere else on the display.

The second exemplary embodiment comprises patterning conductors disposedon the side(s) of a display to connect the row and column lines on thedisplay front surface with electrical connections on the back surface.This is illustrated in FIG. 11, which shows a substrate 1110 having afront (or top) surface 1111 and a back (or bottom) surface 1120, andthat comprises a plurality of patterned conductors 1102 along the sides1112 of the substrate 1110. The pattered conductors 1102 may compriseconductive traces along the substrate sides 1112 and/or top surface 1111of the substrate 1102 that may connect one or more bus lines on thefront 1111 of the display with electrical connections on the back 1120.The patterned conductors 1102 may be funned using any suitable method,such as direct printing (e.g. ink jet printing of thin electrical linesfrom soluble conductive inks); depositing and patterning using vacuumdeposition process with shadow mask; depositing metals or conductiveinks on the display side(s) 1112 and then patterning using lithographyor using a laser to ablate films from regions to remove conductivematerial and to leave conductive traces or leads, where the depositionprocess can include depositing metals or conductors by vacuum processes(e.g. sputtering, evaporation, etc.); or by dipping the display side(s)1112 into a soluble conductive ink.

In either case, the exemplary approaches may allow for the applicationof a barrier film to encapsulate and form hermetic seals around adevice, including any or all patterned conductors. As noted above,although the exemplary approaches were described with respect to adisplay device, embodiments are not so limited. The same or similarmethods could be applied to a lighting panel or any other device thatutilizes a barrier film as an edge or encapsulation layer. For mostdevices, particularly light panels, the number of patterned conductorsis typically much less than the number required for a display andtherefore the methods may be more readily implemented.

Composition and Fabrication of Exemplary Barrier Film

Provided below are exemplary compositions and methods of fabricatingsuch compositions) of barrier film molecules and materials that may beused as an edge sealant in some embodiments as described above. In thisregard, exemplary embodiments of materials (and deposition processes)that may be used as an edge sealant are described in detail in U.S. Pat.No. 7,968,146 entitled “Hybrid Layers for Use in Coatings on ElectronicDevices or Other Articles,” which is hereby incorporated by referencesin its entirety for all purposes. The inventors have found that thematerials and methods described in U.S. Pat. No. 7,968,146, some ofwhich are provided below, may provide a barrier film that may bepreferred for use as an edge sealant for electronic devices. However,embodiments are not necessarily limited to the molecules and methodsdescribed therein.

In this regard, and as was noted above, in some embodiments, the barrierfilm may comprise a hybrid layer comprising a mixture of a polymericmaterial and a non-polymeric material. The hybrid layer may have asingle phase or multiple phases.

As used herein, the term “non-polymeric” may refer to a material made ofmolecules haying a well-defined chemical formula with a single,well-defined molecular weight. A “nonpolymeric” molecule may have asignificantly large molecular weight. In some circumstances, anon-polymeric molecule may include repeat units. As used herein, theterm “polymeric” may refer to a material made of molecules that haverepeating subunits that are covalently linked, and that has a molecularweight that may vary from molecule to molecule because the polymerizingreaction may result in different numbers of repeat units for eachmolecule. Polymers may include, but are not limited to, homopolymers andcopolymers such as block, graft, random, or alternating copolymers, aswell as blends and modifications thereof. Polymers include, but are notlimited to, polymers of carbon or silicon.

As used herein, a “mixture of a polymeric material and a non-polymericmaterial” may refer to a composition that one of ordinary skill in theart would understand to be neither purely polymeric nor purelynon-polymeric. The term “mixture” is intended to exclude any polymericmaterials that contain incidental amounts of non-polymeric material(that may, for example, be present in the interstices of polymericmaterials as a matter of course), but one of ordinary skill in the artwould nevertheless consider to be purely polymeric. Likewise, this isintended to exclude any non-polymeric materials that contain incidentalamounts of polymeric material, but one of ordinary skill in the artwould nevertheless consider to be purely non-polymeric. In some cases,the weight ratio of polymeric to non-polymeric material in the hybridlayer is in the range of 95:5 to 5:95, and preferably in the range of90:10 to 10:90, and more preferably, in the range of 25:75 to 10:90.

The polymeric/non-polymeric composition of a layer may be determinedusing various techniques, including wetting contact angles of waterdroplets, IR absorption, hardness, and flexibility. In certaininstances, the hybrid layer has a wetting contact angle in the range 30°to 85″, and preferably, in the range of 30° to 60°, and more preferably,in the range of 36° to 60″. Note that the wetting contact angle is ameasure of composition if determined on the surface of an as-depositedfilm. Because the wetting contact angle can vary greatly bypost-deposition treatments, measurements taken after such treatments maynot accurately reflect the layer's composition. It is believed thatthese wetting contact angles are applicable to a wide range of layersformed from organo-silicon precursors. In certain instances, the hybridlayer has a nano-indentation hardness in the range 3 to 20 GPa, andpreferably, in the range of 10 to 18 GPa. In certain instances, thehybrid layer has a surface roughness (root-mean-square) in the range of0.1 ran to 10 nm, and preferably, in the range of 0.2 nm to 0.35 nm. Incertain instances, the hybrid layer, when deposited as a 4 mm thicklayer on a 50 mm thick polyimide foil substrate, is sufficientlyflexible that no microstructural changes are observed after at least55,000 rolling cycles on a 1 inch diameter roll at a tensile strain (ε)of 0.2%. In certain instances, the hybrid layer is sufficiently flexiblethat no cracks appear under a tensile strain (ε) of at least 0.35%(typically a tensile strain level which would normally crack a 4 mm puresilicon oxide layer, as considered by a person of ordinary skill in theart).

It should be noted that the term “mixture” is intended to includecompositions having a single phase as well as compositions havingmultiple phases. Therefore, a “mixture” excludes subsequently depositedalternating polymeric and non-polymeric layers. Put another way, to beconsidered a “mixture,” a layer should be deposited under the samereaction conditions and/or at the same time.

The hybrid layer may be formed by chemical vapor deposition using asingle precursor material (e.g. from a single source or multiplesources). As used herein, a “single source of precursor material” mayrefer to a source that provides all the precursor materials that arenecessary to form both the polymeric and non-polymeric materials whenthe precursor material is deposited by CVD, with or without a reactantgas. This is intended to exclude methods where the polymeric material isformed using one precursor material, and the non-polymeric material isformed using a different precursor material. As would be appreciated byone of skill in the art, a “single source” of precursor material mayinclude one or more containers (e.g. crucibles) that may be used duringthe process to heat or mix the chemicals that may form or contain asingle precursor material. For instance, a single precursor material maybe mixed or located in a plurality of containers and then vapordeposited. In general, by using a single precursor material, thedeposition process may be simplified. For example, a single precursormaterial will obviate the need for separate streams of precursormaterials and the attendant need to supply and control the separatestreams.

In general, the precursor material may be a single compound or a mixtureof compounds. Where the precursor material is a mixture of compounds, insome cases, each of the different compounds in the mixture is, byitself, able to independently serve as a precursor material. Forexample, the precursor material may be a mixture of hexamethyldisiloxane (HMDSO) and dimethyl siloxane (DMSO). Other precursors mayalso be utilized such as tetraethoxysilane (TEOS) or dimethyl siloxane(DMSO) or octamethylcyclotetrasiloxane or hexamethyldisilazane or otherorganosilanes organosiloxanes and organosilazanes or their mixtures.

In some cases, plasma-enhanced CVD (PE-CVD) may be used for depositionof the hybrid layer. PE-CVD may be desirable for various reasons,including low temperature deposition, uniform coating formation, andcontrollable process parameters. Various PE-CVD processes that aresuitable for use in forming a hybrid layer that may comprise a barrierlayer for an edge sealant are known in the art, including those that useRF energy to generate the plasma.

The precursor material may be a material that is capable of forming botha polymeric material and a non-polymeric material when deposited bychemical vapor deposition. Various such precursor materials are suitablefor use in providing a barrier film comprising a hybrid layer and may bechosen for their various characteristics. For example, a precursormaterial may be chosen for its content of chemical elements, itsstoichiometric ratios of the chemical elements, and/or the polymeric andnon-polymeric materials that are formed under CVD. For instance,organo-silicon compounds, such as siloxanes, are a class of compoundssuitable for use as the precursor material. Representative examples ofsiloxane compounds include hexamethyl disiloxane (HMDSO) and dimethylsiloxane (DMSO). When deposited by CVD, these siloxane compounds areable to form polymeric materials, such as silicone polymers, andnon-polymeric materials, such as silicon oxide. The precursor materialmay also be chosen for various other characteristics such as cost,non-toxicity, handling characteristics, ability to maintain liquid phaseat room temperature, molecular weight, etc.

Other organo-silicon compounds suitable for use as a precursor materialinclude methylsilane; dimethylsilane; vinyl trimethylsilane;trimethylsilane; tetramethylsilane; ethylsilane; disilanomethane;bis(methylsilano)methane; 1,2-disilanoethane;1,2-bis(methylsilano)ethane; 2,2-disilanopropane;1,3,5-trisilano-2,4,6-trimethylene, and fluorinated derivatives of thesecompounds. Phenyl-containing organo-silicon compounds suitable for useas a precursor material include: dimethylphenylsilane anddiphenylmethylsilane. Oxygen containing organo-silicon compoundssuitable for use as a precursor material include:dimethyldimethoxysilane; 7-tetramethylcyclotetrasiloxane;1,3-dimethyldisiloxane; 1,1,3,3-tetramethyldisiloxane;1,3-bis(silanomethylene)disiloxane; bis(1-methyldisiloxanyl)methane;2,2-bis(1-methyldisiloxanyl) propane;2,4,6,8-tetramethylcyclotetrasiloxane; octamethylcyclotetrasiloxane;2,4,6,8,10-pentamethylcyclopentasiloxane;1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene;hexamethylcyclotrisiloxane; 1,3,5,7,9-pentamethylcyclopentasiloxane;hexamethoxydisiloxane, and fluorinated derivatives of these compounds.Nitrogen-containing organosilicon compounds suitable for use as aprecursor material include: hexamethyldisilazane;divinyltetramethyldisilizane; hexamethylcyclotrisilazane;dimethylbis(N-methylacetamido) silane;dimethylbis-(N-ethylacetamido)silane;methylvinylbis(N-methylacetamido)silane;methylvinylbis(Nbutylacetamido)silane;methyltris(N-phenylacetamido)silane; vinyltris(N-ethylacetamido)silane;tetrakis(Nmethylacetamido)silane; diphenylbis(diethylaminoxy)silane;methyltris(diethylaminoxy)silane; and bis(trimethylsilyl)carbodiimide.

When deposited by CVD, the precursor material may form various types ofpolymeric materials in various amounts, depending upon the type ofprecursor material, the presence of any reactant gases, and otherreaction conditions. The polymeric material may be inorganic or organic.For example, where organo-silicon compounds are used as the precursormaterial, the deposited hybrid layer may include polymer chains of Si—Obonds, Si—C bonds, or Si—O—C bonds to form polysiloxanes,polycarbosilanes, and polysilanes, as well as organic polymers.

When deposited by CVD, the precursor material may form various types ofnon-polymeric materials in various amounts, depending upon the type ofprecursor material, the presence of any reactant gases, and otherreaction conditions. The non-polymeric material may be inorganic ororganic. For example, where organo-silicon compounds are used as theprecursor material in combination with an oxygen-containing reactantgas, the non-polymeric material may include silicon oxides, such as SiO,Si0₂, and mixed-valence oxides SiO_(x). When deposited with anitrogen-containing reactant gas, the non-polymeric material may includesilicon nitrides (SiN_(x)). Other non-polymeric materials that may beformed in some instances include silicon oxycarbide and siliconoxynitrides.

When using PE-CVD, the precursor material may be used in conjunctionwith a reactant gas that reacts with the precursor material in thePE-CVD process. The use of reactant gases in PE-CVD is known in the artand various reactant gases are suitable for use in the presentinvention, including oxygen containing gases (e.g., 0₂, ozone, water)and nitrogen-containing gases (e.g., ammonia). The reactant gas may beused to vary the stoichiometric ratios of the chemical elements presentin the reaction mixture. For example, when a siloxane precursor materialis used with an oxygen or nitrogen-containing reactant gas, the reactantgas will change the stoichiometric ratios of oxygen or nitrogen inrelation to silicon and carbon in the reaction mixture. Thisstoichiometric relation between the various chemical elements (e.g.,silicon, carbon, oxygen, nitrogen) in the reaction mixture may be variedin several ways. One way is to vary the concentration of the precursormaterial or the reactant gas in the reaction. Another way is to vary theflow rates of the precursor material or the reactant gas into thereaction. Another way is to vary the type of precursor material orreactant gas used in the reaction.

Changing the stoichiometric ratios of the elements in the reactionmixture can affect the properties and relative amounts of the polymericand non-polymeric materials in the deposited hybrid layer. For example,a siloxane gas may be combined with varying amounts of oxygen to adjustthe amount of non-polymeric material relative to the polymeric materialin the hybrid layer. By increasing the stoichiometric ratio of oxygen inrelation to the silicon or carbon, the amount of non-polymeric material,such as silicon oxides, may be increased. Similarly, by reducing thestoichiometric ratio of oxygen, the amount of silicon andcarbon-containing polymeric material may be increased. The compositionof the hybrid layer may also be varied by adjusting other reactionconditions. For example, in the case of PE-CVD, process parameters suchas RF power and frequency, deposition pressure, deposition time, and gasflow rates can be varied.

Thus, by using the exemplary methods as described above, it is possibleto form a hybrid layer of hybrid polymeric/non-polymeric character andhaving characteristics suitable for use in various applications,particular as a barrier film to reduce edge ingress of permeates. Suchcharacteristics of the barrier film may include optical transparencye.g., in some cases, the hybrid layer may be optically transparent orsemi-transparent), impermeability, flexibility, thickness, adhesion, andother mechanical properties. For example, one or more of thesecharacteristics may be adjusted by varying the weight % of polymericmaterial in the hybrid layer, with the remainder being non-polymericmaterial. For instance, to achieve a desired level of flexibility andimpermeability, the wt % of polymeric material may preferably be in therange of 5 to 95%, and more preferably in the range of 10 to 25%.However, other ranges are also possible depending upon the application.

Exemplary Embodiments

In some embodiments, a first product may be provided. The first productmay comprise a substrate having a first surface, a first side, and afirst edge where the first surface meets the first side; and a devicedisposed over the substrate, the device having a second side, where atleast a first portion of the second side is disposed withinapproximately 3.0 mm from the first edge of the substrate. The firstproduct may further comprise a first barrier film that covers at least aportion of the first edge of the substrate, at least a portion of thefirst side of the substrate, and at least the first portion of thesecond side of the device. An exemplary embodiment was described abovewith reference to the product 900 shown in FIG. 9.

As used in this context, the term “within” refers to the overalldistance between the portion of the device and the edge of thesubstrate, and is thereby not intended to require that the device bedisposed inside the edges of the substrate (i.e. the device is notlimited to having a side that does not extend beyond one of the edges ofthe substrate). That is, for example, if the device extends beyond theedge of the substrate by less than 3.0 mm, then it is considered to be“within” 3.0 mm of the edge of the substrate. Similarly, if the side ofthe device is disposed over the substrate but is less than 3.0 mm fromthe edge, it is also considered to be within 3.0 mm of the edge of thesubstrate. The term “within” is meant to be inclusive, and therebycovers distances of less than 3.0 mm as well.

Although the inventors have discovered that embodiments provided hereinmay be effective and advantageous when the device is disposed at adistance of up to and including 3.0 mm from an edge of the substrate,the inventors have also found that some embodiments disclosed herein areunexpectedly effective at preventing ingress at much shorter distances(i.e. less than 1.0 mm and ever more preferably at less than 0.1 mm).For example, the configuration of having the barrier layer coverportions of the vertical side of the substrate provides the ability toincrease the length of the ingress path along the interface of thesubstrate and the barrier layer (e.g. Path-2 (905) in FIG. 9), which isoften the quickest path for contaminates to permeate into the activedevice area of the device. Moreover, the extension of the ingress pathmay be provided without increasing the thickness of the barrier film inthe horizontal direction (i.e. the perpendicular length of the barrierlayer from the side of the device), which may result in devices withreduced non-device edge areas that are typically associated with the useof edge seals. In this manner, embodiments provided herein may providedevices having no non-device edge area (or a very limited non-activeedge area) along one or more sides of the device.

In this regard, in some embodiments of the first product as describedabove, at least the first portion of the second side of the device maybe disposed within approximately 2.0 mm from the first edge of thesubstrate. In some embodiments, at least the first portion of the secondside of the device may be disposed within approximately 1.0 mm from thefirst edge of the substrate. In some embodiments, at least the firstportion of the second side of the device may be disposed withinapproximately 0.5 ram from the first edge of the substrate. In someembodiments, at least the first portion of the second side of the devicemay be disposed within approximately 0.1 mm from the first edge of thesubstrate. In some embodiments, at least the first portion of the secondside of the device may be disposed within approximately 0.05 mm from thefirst edge of the substrate.

In some embodiments, in the first product as described above, the devicemay comprise an active device area and an inactive device area, and atleast a portion of the active device area of the device may be disposedwithin 0.1 mm from the first edge of the substrate. That is, for examplethe border area of the product (comprising the non-device edge area andthe inactive device area) may be less than 0.1 mm such that at least aportion of the active area may be disposed relatively close to the edgeof the substrate. As noted above, the smaller the distance the activedevice area is disposed from the edge of the substrate, the less deadspace the product may appear to have (at least for embodiments where theproduct comprises a lighting emitting device).

In some embodiments, in the first product as described above, the devicemay comprise an active device area, and at least a portion of the activedevice area of the device may be disposed within 0.1 mm from the firstedge of the substrate. This may, but need not, correspond to a devicethat does not comprise an inactive device area, at least for a portionof the device that has an active device area that is disposed close tothe edge of the substrate.

In some embodiments, in the first product as described above, thesubstrate may comprise any one of: a glass, a plastic, or a metal foilmaterial. In general, any suitable substrate material may be used. Itmay be preferred in some embodiments that a material that may be readilybroken (such as by cutting) is used to facilitate the process ofexposing the sides of the device and substrate of the device. Theexposed sides (or portions thereof) may then be covered using a barrierfilm to encapsulate the whole device or a portion thereof.

In some embodiments, in the first product as described above, the firstbarrier film may comprise a mixture of polymeric material andnon-polymeric material. As noted above; although embodiments are not solimited, the inventors have generally found that this type of materialmay be preferred for use as a barrier layer because it may provide goodproperties with regard to both the bulk diffusion coefficient across thematerial and the diffusion coefficient at the interface with thesubstrate. This material has also been found to be capable of beingdeposited onto vertical surfaces, such as the side of the substrateand/or the device. In some embodiments, the first barrier film maycomprise a mixture of polymeric silicon and inorganic silicon.

In some embodiments, in the first product as described above, the firstbarrier film may be disposed over at least a portion of the device. Thatis, the barrier layer may cover at least a portion of the device (i.e.the top surface in addition to one or more sides—or portions of thesides). In some embodiments, the first barrier film may be disposed overthe entire device. In general, depositing the barrier film such that itis disposed over the device may be preferred in some instances becauseit may decrease manufacturing costs and complexity. In such embodiments,the barrier film could be deposited as a blanket layer in a singleprocessing step, rather than requiring the use of a mask (which wouldhave to be properly aligned). Moreover, the barrier film may alsofunction as a top barrier layer (in addition to an edge sealant), whichmay either eliminate the need for an additional top sealant component,or it could be used in conjunction with a top encapsulation (such asglass and epoxy or another barrier film material) to provide additionalprotection again contaminates.

In some embodiments, in the first product as described above, the devicemay comprise a plurality of sides and the first barrier film may covereach of the plurality of sides of the device. That is, for instance, thebarrier film may serve as art edge seal along each of the sides of thedevice. It should be noted that, in some embodiments where the barrierfilm covers a plurality of sides of the device, each of those sides ofthe device may, but need not, be disposed within 3.0 mm (more preferablywithin 1.0 mm; and more preferably within 0.1 rum) of an edge of thesubstrate. In some embodiments, the substrate may comprise a pluralityof sides, and the first barrier film may cover at least a portion ofeach of the plurality of sides of the substrate. Again, it should benoted that such embodiments may have one or more portions of the devicethat is disposed at a distance of greater than 3.0 mm, although as notedabove, it may generally be preferred that the sides of the device areeach disposed as close to an edge of the substrate as practicable toreduce the size of the non-active edge area. In some embodiments, thesubstrate may comprise four sides and the first barrier film may coverat least a portion of at least two of the sides of the substrate. Thatis, a device may have no non-device edge areas (or a reduced non-deviceedge area) on two sides of the device based on the disposition of thesides of the device within a small distance (e.g. less than 3.0 mm;preferably less than 0.1 mm), of an edge of the substrate, but may havenon-device edge areas, for instance, on the upper and lower portions ofthe front surface of a product (such as for user interface or hardwareequipment such as cameras, speakers, etc.). In some such embodiments,the first barrier film may be disposed over the entire device; however,embodiments are not so limited.

In some embodiments, in the first product as described above, the firstproduct may further comprise a second barrier film that may be disposedover the device. The first barrier film and the second barrier maycomprise different materials. In some embodiments, the second barrierfilm may comprise a glass, plastic, a plastic coated with a barrierfilm, or a metal foil material. For example, one of the more practicalembodiments may be to use aplastic material coated with a barrier filmas a second barrier layer to encapsulate the top of the device. Theplastic material that is coated with a barrier film may thereby beconsidered a “second barrier film” as used herein. The plastic havingthe coated barrier film may be attached to the top of the device e.g. soas to cover the device) in any suitable manner, including through theuse of an epoxy.

In some embodiments, in the first product as described above, thesubstrate may have a first outer perimeter, and the device may have asecond outer perimeter. As used herein, the “outer perimeter” may referto the edge of the device or the substrate that forms a continuous orsemi-continuous edge or interface around that component. That is, the“outer perimeter” may comprise the portions of the substrate or thedevice that are disposed at the farthest distance away from the centerof the substrate or the device, respectively, in a direction that isperpendicular to the interface between the device and substrate. In someembodiments, at least approximately 50% of the second outer perimeter ofthe device may be disposed within approximately 1.0 mm from the firstouter perimeter of the substrate. That is, for instance, if the devicemay comprise four equal length sides that comprise its perimeter, thenthis embodiment may comprise at least two of those sides disposed within1.0 mm of a portion of the perimeter of the substrate (which comprisesan edge of the substrate). In general, the larger the percentage of theouter perimeter of the active that is disposed at a short distance fromthe outer perimeter of the substrate, the less non-active edge area thedevice may have. In some embodiments, at least approximately 50% of thesecond outer perimeter of the device may be disposed withinapproximately 0.1 mm from the first outer perimeter of the substrate. Insome embodiments, at least approximately 75% of the second outerperimeter of the device may be disposed within approximately 1 min fromthe first outer perimeter of the substrate. In some embodiments, atleast approximately 75% of the second outer perimeter of the device maybe disposed within approximately 0.1 mm from the first outer perimeterof the substrate.

For embodiments where the device comprises a curved side or sides (e.g.when the outer perimeter of the device or a portion thereof is curved),then embodiments in which 50% of the second outer perimeter of thedevice may be disposed within approximately 1.0 mm from the first outerperimeter of the substrate may correspond to having 50% of the length ofthe outer perimeter (i.e. the curved side) of the device disposed within1.0 mm of any portion of the edge of the substrate (e.g. the outerperimeter of the substrate). In some embodiments, at least 10% of thesecond outer perimeter of the device (e.g. having a curved perimeter)may be disposed within approximately 3.0 mm (preferably within 1.0 mm,and more preferably within 0.1 mm) from the first outer perimeter of thesubstrate (i.e. the edge of the substrate). In some embodiments, atleast 30% (preferably at least 50%, and more preferably at least 75%) ofthe second outer perimeter of the device (e.g. having a curvedperimeter) may be disposed within approximately 3.0 mm (preferablywithin 1.0 mm, and more preferably within 0.1 mm) from the first outerperimeter of the substrate (i.e. the edge of the substrate). In someembodiments, the substrate may also have a curved perimeter, althoughembodiments are not so limited.

In some embodiments, in the first product as described above, the firstbarrier film may have been deposited using chemical vapor deposition CVDand an organosilicon precursor. In general, CVD (and preferably PE-CVD)may comprise an efficient manner of depositing the barrier film(particularly when the barrier film comprises a blanket layer), althoughembodiments are not so limited. Moreover, vapor deposition techniqueshave been found by the inventors to be an effective way to depositbarrier film materials on vertical surfaces.

In some embodiments, the first product may comprise anyone of: a solarcell, a thin film battery, an organic electronic device, a lightingpanel or a lighting source having a lighting panel, a display or anelectronic device having a display, a mobile phone, a notebook computer,a tablet computer, or a television.

In some embodiments, in the first product as described above, the devicemay comprise an organic layer. In some embodiments, the device comprisesan OLED. As noted above, many of the examples provided herein relate toorganic lighting devices (such as lighting panels or displays). Whilethis may be a preferred embodiment because the non-active edge areas aretypically noticeable to a viewer when observing the light source,embodiments are not so limited.

In some embodiments, in the first product as described above, the firstproduct may further comprise an electronics packaging, where theelectronics packaging has at least a dimension that is less than that ofthe device footprint. The “electronics packaging” may refer to anyand/or all of the electronic components that comprise the first productthat are not integrally coupled to or disposed within the device. Ingeneral, if the device does not have a non-device edge area around itssides (or such areas are relatively small and not noticeable to a userof the device) that are attributable to an edge seal or barrier film,then the advantage provided by such embodiments (at least from anaesthetic perspective) may not be as beneficial if other componentsextend around the device on any sides. In some embodiments, theelectronics packaging may have a total area that is less than the totalarea of the device footprint. As used in this context, the “total area”may generally refer to the area of the packaging disposed substantiallyparallel to the device footprint. Thus, for example, if the total areaof the electronics packaging is less than that of the device footprint,than the electronics packaging may be completely covered by the devicesuch that the packaging may not be visible to a user. In suchembodiments, the product may not have any non-device edge areas.

In some embodiments, in the first product as described above, the firstproduct may further comprise a plurality of devices. That is, forinstance, a product may comprise a plurality of OLEDs that may beelectrically connected and/or disposed on a single surface (such as whena display or lighting panel may be tiled). In some embodiments, each ofthe plurality of devices may be disposed at a distance of less than 6.0mm from at least one of the other devices. This could, for instance,comprise embodiments where each of the devices has 3.0 mm of non-deviceedge area disposed around its sides contributed by, for instance, thebarrier film that is forming an edge seal. When the devices are disposedadjacent to one another (for instance in a 4×4 or 6×6 grid array), thedistance between each device will be equivalent to the non-device edgearea around each of the devices in a direction perpendicular to a sideof each of the devices. Therefore, the smaller the non-device edge areaaround each device, the less dead space the device will have—making thetiling effect less noticeable to an observer. In some embodiments, eachof the plurality of devices is disposed at a distance of less than 4.0mm from at least one of the other devices. In some embodiments, each ofthe plurality of devices may be disposed at a distance of less than 2.0mm from at least one of the other devices. In some embodiments, each ofthe plurality of devices may be disposed at a distance of less than 1.0mm from at least one of the other devices. In some embodiments, each ofthe plurality of devices may be disposed at a distance of less than 0.1mm from at least one of the other devices. As noted above, embodimentsprovided herein may provide an effective edge sealant without requiring,in some embodiments, that the barrier film have a large perpendiculardistance extending away from the device footprint.

In this regard, in some embodiments, in the first product as describedabove, where the product comprises a plurality of devices, the pluralityof devices may be disposed on the same substrate. In some embodiments,the plurality of devices may be disposed on different substrates. Insome embodiments, the plurality of devices may comprise at least twodevices that emit light having a peak wavelength that is different. Insome embodiments, the first product may comprise a display. In general,tiling light emitting devices may provide efficiencies in manufacturing(e.g. it may be easier to fabricate a plurality of smaller devicesrather than one large device) and a more robust system (e.g. if one ofthe devices fails then only that device may need to be replaced ratherthan having to replace the entire device).

Exemplary embodiments comprising tiling of two separate devices may beas follows: in some embodiments, the tiled product may comprise a firstsubstrate having a first surface, a first side, and a first edge wherethe first surface meets the first side; a second substrate having afirst surface, a first side, and a first edge where the first surfacemeets the first side; and a plurality of devices that comprises a firstdevice and a second device. The first device may be disposed over thefirst substrate and have a second side, where at least a first portionof the second side of the first device is disposed within approximately3.0 mm from the first edge of the first substrate. The tiled device mayfurther comprise a first barrier film that covers at least a portion ofthe first edge of the first substrate, at least a portion of the firstside of the first substrate, and at least the first portion of thesecond side of the first device. The second device may be disposed overthe second substrate and have a have a second side, where at least afirst portion of the second side of the second device is disposed withinapproximately 3.0 mm from the first edge of the second substrate. Thetiled device may further include a second barrier film that covers atleast a portion of the first edge of the second substrate, at least aportion of the first side of the second substrate, and at least thefirst portion of the second side of the second device. In someembodiments, in the tiled device as described above, the first portionof the second side of the first device may be disposed at a distance ofless than 6.0 mm of the first portion of the second side of the seconddevice. In some embodiments, the first portion of the second side of thefirst device may be disposed at a distance of less than 2.0 mm of thefirst portion of the second side of the second device. In someembodiments, the first portion of the second side of the first devicemay be disposed at a distance of less than 1.0 mm of the first portionof the second side of the second device.

In some embodiments, in the first product as described above, the firstdevice may comprise an active device area and an inactive device area;the second device may comprise an active device area and an inactivedevice area and at least a portion of the active device area of thefirst device is disposed at a distance of less than 1.0 mm of at least aportion of the active device area of the second device. In general, theshorter the distance between the active device areas (as opposed to justthe device footprints, which may also include inactive device area) ofeach of the plurality of devices, the less perceivable any border areabetween the devices may be to an observer (at least for light emittingproducts such as displays or lighting panels).

In some embodiments, in the first product as described above, the firstdevice may comprise an active device area; the second device maycomprise an active device area; and at least a portion of the activedevice area of the first device may be disposed at a distance of lessthan 0.01 mm of at least a portion of the active device area of thesecond device.

In some embodiments, in the first product as described above, thesubstrate may further comprise a second surface and a plurality ofelectrical conductors may be disposed within the substrate, where eachof the plurality of conductors extends from the first surface to thesecond surface of the substrate. As was described in detail above withreference to FIGS. 10 and 11, providing a device often requires thatcurrent or voltage be supplied to electrical components (such aselectrodes) disposed on opposing surfaces of the substrate. In someembodiments, each of the electrical conductors may be disposed within amicro-hole. That is, one or more vias may be provided through thesubstrate to make the electrical connections. In some embodiments, thesubstrate may comprise an outer perimeter and each of the plurality ofconductors may be disposed within 1.0 mm of the outer perimeter.Although the micro-holes may be relatively small, each one may in factcreate inactive device areas in the device and therefore the inventorshave found that my moving these components toward the edge of thedevice, their effect may be minimized to an observer (e.g. when thedevice is a light emitting device). However; embodiments are not solimited, and in some instances, where the substrate comprises an outerperimeter, at least one of the conductors may be disposed at a distanceof greater than 1.0 mm from the outer perimeter of the substrate.

In some embodiments, in the first product as described above, the firstproduct may further comprise a plurality of electrical conductors thatmay be disposed on the first side of the substrate. In some embodiments,the substrate may further comprise a second surface and each of theplurality of conductors may extend from the first surface to the secondsurface of the substrate. That is, in some embodiments, the electricalconductors may, but need not, be disposed within the substrate (e.g.using one or more vias). That is, for instance, the plurality ofconductors could be disposed on (or over) one or more of the sides ofthe substrate (e.g. the conductors may be patterned conductors disposedacross a portion of the side of the substrate).

In some embodiments, in the first product as described above where thesubstrate comprises a second surface and a plurality of conductorseither disposed within the substrate or disposed on the first side ofthe substrate, the first product may further comprise a plurality ofelectrodes disposed over the substrate. In some embodiments, each of theplurality of electrical conductors may be electrically connected to atleast one of the plurality of electrodes. In some embodiments, theelectrical connection between the plurality of electrodes and theplurality of electrical conductors may comprise a patterned conductivetrace and/or bus line disposed on the first surface of the substrate.

Embodiments may also provide a first method. The first method mayinclude the steps of providing a substrate having: a first surface, afirst side, and a first edge where the first surface meets the firstside; and a device disposed over the first surface of the substrate, thedevice having a second side. At least a first portion of the second sideof the device may be disposed not more than 3.0 mm from the first edgeof the substrate. After providing the substrate, the first methodfurther includes the step of fabricating a first barrier film so as tocover at least a portion of the first edge of the substrate, at least aportion of the first side of the substrate, and at least the firstportion of the second side of the device.

The term “providing” is generally used in this context to be aninclusive term and encompass any manner of obtaining or making availablea substrate having a device disposed over the substrate for use in suchmethods. For instance, in some embodiments, the substrate and the device(and/or components thereof) may be acquired, such as by purchase from athird party. In some embodiments, the substrate and/or device could befabricated, manufactured, or otherwise assembled, or the componentscould be provided to a third party that may then fabricate or assemblethe substrate having a device disposed thereon.

Similarly, the term “fabricating” is also intended to be an inclusiveterm, and may comprise any suitable deposition process or othertechnique for disposing the barrier film so as to cover the portions ofthe side and edge of the of the substrate and the side of the device.This could include, by way of example only, vacuum depositing a blanketlayer of barrier film or a patterned layer through a mask, solutiondepositing, etc.

In some embodiments, in the first method as described above, at leastthe first portion of the second side may be disposed not more than 2.0mm from the first edge. In some embodiments, at least the first portionof the second side may be disposed not more than 1.0 mm from the firstedge. In some embodiments, at least the first portion of the second sidemay be disposed not more than 0.5 mm from the first edge. In someembodiments, at least the first portion of the second side may bedisposed not more than 0.1 mm from the first edge.

In some embodiments, in the first method as described above, the devicemay comprise an active device area; and at least a portion of the activedevice area of the device may be disposed within 0.1 mm from the firstedge of the substrate.

In some embodiments, in the first method as described above, the firstbarrier film may comprise a mixture of polymeric material andnon-polymeric material. In some embodiments, the first barrier film maycomprise a mixture of polymeric silicon and inorganic silicon.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: scribing the substrateat a plurality of positions, depositing the device over the firstsurface of the substrate, and breaking the substrate at the plurality ofscribed positions. As used in this context, “breaking” may comprise anysuitable method of separating the substrate into a plurality of separatesegments or pieces (such as snapping the substrate or applying pressurealong the scribed positions). Breaking the substrate at the scribedpositions should expose the vertical side of the substrate (in someembodiments, the side of the device may also be exposed if it hasalready been deposited over the substrate), such that the barrier filmmay be deposited over each of these portions. As used in this context, a“plurality of scribe positions” may refer to any shape or disposition ofthe scribe along a surface of the substrate, such as a line, a pluralityof dots, a curve, or any other shape or configuration of the scribingsuch that the substrate may break along predetermined locations. In someembodiments, the step of breaking the substrate may be performed beforethe device is deposited over the first surface of the substrate. In someembodiments, the step of breaking the substrate may be performed afterthe device is deposited over the first surface of the substrate.

As noted above, breaking the substrate at the scribed positions afterthe device is deposited should expose the vertical side of the substrateand of the device. By breaking the substrate after the device isdeposited, the inventors have found that it is less likely that the edgeof the substrate will be contaminated with any other particles (such asorganic material). Contaminants may affect the ease with which permeantsingress into the device toward the active device area. Therefore, theinventors have found that it may be generally preferred to break thesubstrate to expose the sides of the substrate and the device after thedevice is deposited but before the deposition of the barrier film.Moreover, the breaking step may be performed in a vacuum to prevent orreduce additional contamination of the device.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: depositing the deviceover the first surface of the substrate; after the device is deposited,scribing the substrate and the device at a plurality of positions; andbreaking the substrate and the device at the plurality of scribedpositions. Thus, in this exemplary embodiment, both the substrate andthe device may be scribed and then broken (rather than just thesubstrate) to expose the sides to be covered (at least partially) by thebarrier film.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the step of depositing the device overthe entire first surface of the substrate. That is, for example, someembodiments may utilize a deposition mask that is larger than the areaof the first surface of the substrate such that the device will bedisposed over the entire surface of the substrate. In some instances,this embodiment may not be preferred because it may result in some ofthe material of the active layer being disposed on the side of thesubstrate (i.e. the side of the substrate may be contaminated). In someembodiments, the step of providing a substrate may include the step ofdepositing the device through a mask having an opening that is largerthan the first surface of the substrate.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: depositing the deviceover the first surface of the substrate; and after the device isdeposited, breaking the substrate and the device at a plurality ofplaces. As used in this context, the term “breaking” may generally referto any manner of separating the substrate and/or the device into smallercomponents or sections. It can include cutting, ablation, tearing,scribing and separating, etc. In some embodiments, the step of breakingthe substrate and the device may comprise cutting the device and thesubstrate. This may comprise a relatively simple yet effective way ofexposing the sides of the device and the substrate.

In some embodiments, in the first method as described above, the step ofproviding a substrate may include the steps of: depositing the deviceover the first surface of the substrate; after the device is deposited,ablating a portion of the device to expose the second side of thedevice; and after the device is deposited, ablating a portion of thesubstrate to expose the first side. As used in this context, “ablating aportion of the substrate,” may comprise separating the substrate (e.g.the ablation may extend from the top surface of the substrate to thebottom surface of the substrate so as to separate the substrate into twocomponents). However, embodiments are not so limited. In someembodiments, a part of the substrate may be ablated so as to expose aportion of the substrate. The barrier film may then be deposited suchthat it may cover some, or all, of the exposed portion of the substrate(as well as one or more sides of the device). The substrate may then bebroken so as to form two separate components. This is illustrated inFIGS. 15( a)-(d), and described below.

FIG. 15( a) shows a product 1500 having a substrate 1510 and a device1501 disposed over the surface of the substrate 1510. FIG. 15( b) showsthe same device after an ablation process step, in which the device 1501has been ablated to firm two physically separate devices: 1530 and 1531.The ablation of the device 1501 exposed a side 1532 of each of thedevices 1530 and 1531. The ablation process is also shown as havingablated a part of substrate 1510, but has not completely separated thesubstrate 1510 into two separate regions. However, the ablation processexposed a portion of the substrate 1533. FIG. 15( c) shows the sameproduct 1500 after a barrier film 1503 has been blanket deposited overthe devices 1530 and 1531 and portions of the substrate 1510. As shownthe barrier film 1503 was disposed so as to cover both the sides ofdevices 1530 and 1531, as well as portions of the substrate 1510(including the exposed region 1533). FIG. 15( d) further shows theproduct 1500 after the substrate 1510 has been broken into two separatephysical components: 1534 and 1535. As shown, the barrier layer 1503covers the devices 1530 and 1531 as well as portions of the sides ofeach substrate component 1534 and 1535—including the previously exposedportions of sides 1533. Moreover, the devices 1530 and 1531 are shown ashaving sides 1532 that are disposed over an edge of the substratecomponents 1534 and 1535, respectively. In this manner, the devices 1530and 1531 may have sides 1532 that are disposed within a small distancefrom an edge of the substrate that each is disposed over (e.g. less than3.0 mm; preferably less than 1.0 mm; more preferable less than 0.1 mm).This process may provide better control of the portion of the exposedside of the substrate that is covered by the barrier film because theinitial depth of the ablation of the substrate may be controlled beforethe barrier film is deposited.

In some embodiments, multiple devices may be prepared (e.g. disposed ordeposited) on a single substrate (similar to how many displays areprepared on a large size glass). In some such embodiments, to minimizethe non-device edge area around the individual devices withoutcompromising the shelf life of the device, the substrate can be preparedwith notches as shown in FIGS. 16 and 17. As shown in FIG. 16, thedevices may be deposited on the notched substrate followed by depositionby the barrier film. Different size shadow masks may be used for thedevice layers and barrier film deposition to prevent (or reduce) thedevice layers being deposited into the notches and potentiallyinterfering with the proper functioning of the barrier film. The barrierfilm itself may be deposited on the vertical surface of the notches,thereby providing extra edge length for added shelf life (e.g. byincreasing the ingress path of permeants along the interface with thesubstrate). The devices can then be separated using any suitable method,such as those described herein.

FIG. 17 shows another embodiment where the notches do not have verticalwalls but make an obtuse angle 1701 with the top surface of thesubstrate. Such oblique cross-section may prevent the physical vapordeposition layers (such as organic layers of an OLED) to be deposited onthe walls of the notch because they preferably follow line-of-sightdeposition. However, the barrier film, which usually is deposited usingchemical vapor deposition, may be deposited on the walls allowing thebarrier film to have additional edge length to protect the device frompermeants. This pre-notching of the substrate may provide extra edgelength to the barrier when used for a manufacturing process wheremultiple devices are prepared on a single substrate. The substrate canbe cleaned after notching to get rid of the particles that may begenerated during the notching.

In this regard, in some embodiments, in the first method as describedabove, the step of providing the substrate may comprise creating aplurality of notches on the first surface of the substrate, aftercreating the plurality of notches, disposing a plurality of devices overthe first surface of the substrate such that each of the plurality ofdevices is separated from each of the other devices by at least one ofthe plurality of notches, and after the barrier layer is deposited,breaking the substrate along the plurality of notches. In someembodiments, each notch of the plurality of notches may comprise a firstwall and a second wall and at least one of the first wall or the secondwall may form an obtuse angle with the first surface of the substrateprior to breaking the substrate along the plurality of notches.

In some embodiments, in the first method as described above, afterdepositing the first barrier film, the method may further comprise thestep of breaking the substrate.

In some embodiments, in the first method as described above, the firstmethod may further comprise the step of forming a plurality ofconductive paths from the first surface of the substrate to a secondsurface of the substrate. In some embodiments, the step of forming aplurality of conductive paths may include the steps of: fabricating aplurality of vias in the substrate from the first surface to the secondsurface; and disposing conductive material in each of the plurality ofvias.

In some embodiments, in the first method as described above comprisingthe step of forming a plurality of conductive paths from the firstsurface of the substrate to a second surface of the substrate, the stepof forming a plurality of conductive paths may comprise disposingconductive material on the first side of the substrate. In someembodiments, the step of disposing conductive material on the first sideof the substrate comprises any one of, or some combination of: directprinting the conductive material over a portion of the first side toform the plurality of conductive paths; disposing a conductive layerover at least a portion of the first side and patterning the conductivelayer to form the plurality of conductive paths; depositing a conductivelayer using a vacuum process and patterning the conductive layer to formthe plurality of conductive paths; and/or dipping the first side of thesubstrate into a conductive material and patterning the conductivematerial to form the plurality of conductive paths.

Embodiments may also provide a first product prepared by a process. Theprocess may include the steps of providing a substrate having a firstsurface, a first side, and a first edge where the first surface meetsthe first side; and a device disposed over the first surface of thesubstrate having a second side, where at least a first portion of thesecond side is disposed not more than 3.0 mm from the first edge (andpreferably not more than 1.0 mm). The process may further include thestep of depositing a first barrier film so as to cover at least aportion of the first edge of the substrate, at least a portion of thefirst side of the substrate, and at least the first portion of thesecond side.

In some embodiments, in the first product prepared by the process asdescribed above, the first barrier film may comprise a mixture ofpolymeric material and non-polymeric material. As described above, theinventors have found that such a barrier layer may have properties thatmay both restrict the ingress of moisture as well as, in some instances,allow for depositing the material on a vertical surface.

In some embodiments, in the first product prepared by the process asdescribed above, the step of depositing the first barrier film maycomprise using an organosilicon precursor. In some embodiments, the stepof depositing the first barrier film may comprise chemical vapordeposition CVD. In some embodiments, the chemical vapor deposition maybe plasma-enhanced.

In some embodiments, in the first product prepared by the process asdescribed above where the step of depositing the first barrier filmcomprise vapor deposition using an organosilicon precursor, the barrierfilm may consist essentially of a mixture of polymeric silicon andinorganic silicon. In some embodiments, the weight ratio of polymericsilicon to inorganic silicon may be in the range of 95:5 to 5:95. Insome embodiments, the polymeric silicon and the inorganic silicon may becreated from the same precursor material. In some embodiments, at leasta 0.1 μm thickness of the barrier film may be deposited under the samereaction conditions for all the reaction conditions in the depositionprocess. In some embodiments, the water vapor transmission rate may beless than 10⁻⁶ g/m²/day through the at least 0.1 μm thickness of thebarrier film.

In some embodiments, in the first product prepared by the process asdescribed above where the step of depositing the first barrier filmcomprise vapor deposition using an organosilicon precursor, theprecursor material may comprise hexamethyl disiloxane or dimethylsiloxane. In some embodiments, the precursor material may comprise asingle organosilicon compound. In some embodiments, the precursormaterial comprises a mixture of organosilicon compounds.

Embodiments may also provide a first product. The first product maycomprise a substrate having a first surface, a first side, and a firstedge where the first surface meets the first side; and a device disposedover the substrate having a second side; wherein at least a firstportion of the second side is disposed within approximately 1.0 mm fromthe first edge of the substrate. The device may comprise a first organicmaterial. In some embodiments, no portion of the first side of the firstsubstrate is covered by more than 6×10¹³ atoms/cm² of the first organicmaterial. That is, these embodiments may correspond to a product that isin an intermediate production step where the substrate has a side thatdoes not comprise any organic material disposed thereon. For example,the intermediate product may correspond to a part of the fabricationprocess after the step where the organic material of the device has beendeposited on the first substrate, and after the substrate has beenbroken to expose the side of the substrate that is disposed within 1.0mm of the side of the device, but before the barrier film has beendeposited. The organic material was deposited before the side of thesubstrate was exposed and therefore the side will likely not have asignificant amount of the organic layer disposed thereon. In thisregard, in some embodiments, in the first product as described above,the first organic material does not cover any portion of the first sideof the substrate.

In some embodiments, the first product as described above may furthercomprise a first barrier film that covers at least a portion of thefirst edge of the substrate, at least a portion of the first side of thesubstrate, and at least the first portion of the second side of thedevice.

In some embodiments, in the first product as described above, at leastthe first portion of the second side of the device may be disposedwithin approximately 0.1 ram from the first edge of the substrate.

Embodiments may also provide a first method. The first method mayinclude the steps of providing a substrate having: a first surface, afirst side, and a first edge where the first surface meets the firstside; and a device disposed over a first surface of the substrate; andbreaking the device so as to expose a second side of the device suchthat at least a first portion of the device is disposed not more than3.0 mm from the first edge. In some embodiments, at least the firstportion of the device may be disposed not more than 2.0 mm from thefirst edge. In some embodiments, at least the first portion of thedevice may be disposed not more than 1.0 mm from the first edge. In someembodiments, at least the first portion of the device is disposed notmore than 0.1 mm from the first edge.

In some embodiments, in the first method as described above, the devicemay comprise an active device area; and at least a portion of the activedevice area of the device may be disposed not more than 0.1 mm from thefirst edge of the substrate.

In some embodiments, in the first method as described above, the step ofproviding a substrate having a first side and a first edge may includethe step of breaking the substrate along the first side. In someembodiments, the steps of breaking the substrate and breaking the devicemay comprise the same step. As used in this context, the term “comprisethe same step,” may generally refer to when the breaking both thesubstrate and the device may occur simultaneously during a singleprocess steps or through multiple process steps.

In some embodiments, in the first method as described above and afterthe step of breaking the device, the method may further comprise thestep of depositing a first barrier film so as to cover at least aportion of the first edge of the substrate, at least a portion of thefirst side of the substrate, and at least the first portion of thesecond side of the device. In some embodiments, the steps of breakingthe device and depositing a first barrier film may be performed in avacuum. In some embodiments, the first barrier film may comprise amixture of polymeric silicon and inorganic silicon. In some embodiments,the step of breaking the device may comprise cutting the device.

In some embodiments, a first product may be provided having at least aportion of the outer perimeter of the device that overlaps with that ofthe substrate that it is disposed on (i.e. the device and the substratemay share the same (more or less) vertical edge. In some embodiments,the device may be thin film encapsulated with a barrier film coveringthe side of the active component and the substrate. In some embodiments,the encapsulation film is grown in PE-CVD using an organosiliconprecursor. In some embodiments, another layer having a good barrierproperty may be applied on top of the barrier and device. In someembodiments, there may be no non-device edge areas around some or allthe edges of the device because there may be a plurality of openingswithin the device for electrical contacts. In some embodiments, thefirst product may comprise an electronic device/gadget (such as a smartphone) with no non-device edge areas around an OLED panel. In someembodiments, the first product may comprise tiling a plurality of panelshaving no non-device edge areas to form a larger device.

In some embodiments, a method of generating a device may comprise:growing a device on substrate; exposing the vertical sides of the deviceand at least part of substrate; and depositing a thin film toencapsulate both the top and sides of the device and substrate.

Experimental Verification

FIGS. 13 and 14 comprise photographs of an exemplary product that isborderless or near borderless on three sides of the product. Thisexample is provided for illustration purposes only and is not meant tobe limiting. Again, although the exemplary embodiment comprises an OLEDdisplay, embodiments are not so limited.

A large area OLED lighting panel that had electrical contacts on onlyone edge of the device was used to verify the no non-device edge area(e.g. borderless or near borderless) device concept. Initially, theglass substrate was scribed on the back side (non-deposited side) of thesubstrate just inside the edges of where the organic material of theactive device area of the OILED was to be deposited. The substrate wasthen mounted onto a backing plate using a thermally conductive polymer(Fuji-Poly®). This was done to prevent the substrate from breakingduring processing. The substrate was supported in the carrier only bythe edges in which the three sides were scribed to be broken-off afterprocessing. Next, a standard transparent PHOLED device was deposited(i.e. grown) on the surface of the substrate. The substrate was thenremoved to the glove box where the three edges were snapped off withoutremoving the substrate from the backing plate. The substrate wasreloaded into the deposition system where a barrier film comprising ahybrid material (i.e. a mixture of polymer and non-polymer material) wasdeposited. The barrier film was deposited over the entire device andover portions of the three exposed sides of the substrate. FIG. 13 showstwo pictures showing the lighting panel that was made using the abovesteps just after fabrication and encapsulation.

FIG. 14 comprises pictures of the same panel after twenty-one hours ofstorage in ambient room temperature and humidity. As can be seen fromthe photographs in FIG. 14, there is no degradation of the OLED deviceon any of the cut edges. Small dark spots were observed in the device;however, these were a result of large particles on the device prior tothe hybrid barrier encapsulation process.

As noted above, the method in this example utilized by the inventors informing the OILED lighting panel used the following process sequence: 1)scribing the back side of substrate; 2) growing the device on the frontside; 3) breaking the substrate at the pre-scribed places to expose thevertical side of the device and the substrate; and 4) applying barrierfilm encapsulation to cover both the top and vertical sides of thedevice (i.e. the (RFD) and the vertical side of the substrate. As notedabove, other steps could also be used.

CONCLUSION

It is understood that the various embodiments described herein are byway of example only, and are not intended to limit the scope of theinvention. For example, many of the materials and structures describedherein may be substituted with other materials and structures withoutdeviating from the spirit of the invention. The present invention asclaimed may therefore include variations from the particular examplesand preferred embodiments described herein, as will be apparent to oneof skill in the art. It is understood that various theories as to whythe invention works are not intended to be limiting.

The above description is illustrative and is not restrictive. Manyvariations of the invention will become apparent to those skilled in theart upon review of the disclosure. The scope of the invention should,therefore, be determined not with reference to the above description,but instead should be determined with reference to the pending claimsalong with their full scope or equivalents.

Although many embodiments were described above as comprising differentfeatures and/or combination of features, a person of ordinary skill inthe art after reading this disclosure may understand that in someinstances, one or more of these components could be combined with any ofthe components or features described above. That is, one or morefeatures from any embodiment can be combined with one or more featuresof any other embodiment without departing from the scope of theinvention.

As noted previously, all measurements, dimensions, and materialsprovided herein within the specification or within the figures are byway of example only.

A recitation of “a,” “an,” or “the” is intended to mean “one or more”unless specifically indicated to the contrary. Reference to a “first”component does not necessarily require that a second component beprovided. Moreover reference to a “first” or a “second” component doesnot limit the referenced component to a particular location unlessexpressly stated.

All publications mentioned herein are incorporated herein by referenceto disclose and describe the methods and/or materials in connection withwhich the publications are cited. The publications discussed herein areprovided solely for their disclosure prior to the filing date of thepresent application. Nothing herein is to be construed as an admissionthat the present invention is not entitled to antedate such publicationby virtue of prior invention. Further, the dates of publication providedmay be different from the actual publication dates, which may need to beindependently confirmed.

1-100. (canceled)
 101. A first method comprising: providing a substratehaving: a first surface, a first side, and a first edge where the firstsurface meets the first side; and a device disposed over the firstsurface of the substrate, the device having a second side, wherein atleast a first portion of the second side is disposed not more than 3.0mm from the first edge; and after providing the substrate, depositing afirst barrier film so as to cover at least a portion of the first edgeof the substrate, at least a portion of the first side of the substrate,and at least the first portion of the second side of the device. 102.The first method of claim 101, wherein the step of providing thesubstrate comprises: creating a plurality of notches on the firstsurface of the substrate; after creating the plurality of notches,disposing a plurality of devices over the first surface of the substratesuch that each of the plurality of devices is separated from each of theother devices by at least one of the plurality of notches; and after thebarrier layer is deposited, breaking the substrate along the pluralityof notches.
 103. The first method of claim 101, wherein the step ofproviding a substrate comprises: scribing the substrate at a pluralityof positions; depositing the device over the first surface of thesubstrate; and breaking the substrate at the plurality of scribedpositions.
 104. The first method of claim 101, wherein the step ofproviding a substrate comprises: depositing the device over the firstsurface of the substrate; after the device is deposited, scribing thesubstrate and the device at a plurality of positions; and breaking thesubstrate and the device at the plurality of scribed positions.
 105. Thefirst method of claim 101, wherein the step of providing a substratecomprises: depositing the device over the first surface of thesubstrate; and after the device is deposited, breaking the substrate andthe device at a plurality of places.
 106. The first method of claim 101,wherein the step of providing a substrate comprises: depositing thedevice over the first surface of the substrate; after the device isdeposited, ablating a portion of the device to expose the second side ofthe device; and after a portion of the device is exposed, ablating aportion of the substrate to expose the first side.
 107. A first productprepared by a process comprising the steps of: providing a substratehaving: a first surface, a first side, and a first edge where the firstsurface meets the first side; and a device disposed over the firstsurface of the substrate, the device having a second side, wherein atleast a first portion of the second side is disposed not more than 1.0mm from the first edge; depositing a first barrier film so as to coverat least a portion of the first edge of the substrate, at least aportion of the first side of the substrate, and at least the firstportion of the second side; and depositing a second barrier film thatcovers at least a portion of the first edge of the second substrate, atleast a portion of the first side of the second substrate, and at leastthe first portion of the second side of the second device.
 108. A firstproduct comprising: a first substrate having a first surface, a firstside, and a first edge where the first surface meets the first side; asecond substrate having a first surface, a first side, and a first edgewhere the first surface meets the first side; wherein the plurality ofdevices comprises a first device and a second device, wherein the firstdevice is disposed over the first substrate, the first device having asecond side; wherein at least a first portion of the second side of thefirst device is disposed within approximately 3 mm from the first edgeof the first substrate; a first barrier film that covers at least aportion of the first edge of the first substrate, at least a portion ofthe first side of the first substrate, and at least the first portion ofthe second side of the first device; wherein the second device isdisposed over the second substrate, the second device having a secondside; wherein at least a first portion of the second side of the seconddevice is disposed within approximately 3 mm from the first edge of thesecond substrate; and a second barrier film that covers at least aportion of the first edge of the second substrate, at least a portion ofthe first side of the second substrate, and at least the first portionof the second side of the second device.
 109. A first productcomprising: a substrate having a first surface, a first side, and afirst edge where the first surface meets the first side; and a devicedisposed over the substrate having a second side; wherein at least afirst portion of the second side is disposed within approximately 1 mmfrom the first edge of the substrate; wherein the device comprises afirst organic material; and wherein no portion of the first side of thefirst substrate is covered by more than 6×1013 atoms/cm² of the firstorganic material.
 110. A first method comprising: providing a substratehaving: a first surface, a first side, and a first edge where the firstsurface meets the first side; and a device disposed over a first surfaceof the substrate; breaking the device so as to expose a second side ofthe device such that at least a first portion of the device is disposednot more than 3.0 mm from the first edge.